2SK3407 Datasheet and Replacement

2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3407 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Absolute

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3404SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEORDERING INFORMATIONDESCRIPTION The 2SK3404 is N-Channel MOS FET device that features aPART NUMBER PACKAGElow on-state resistance and excellent switching characteristics,2SK3404 TO-220ABdesigned for low voltage high current applications such as2SK3404-ZK TO-263(MP-25ZK)DC/DC con

2SK3403 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3403 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.29 (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDSS = 450 V) Enhancement mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Absolut

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3408N-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The 2SK3408 is a switching device which can be driven+0.10.4 0.05directly by a 4-V power source.0.16+0.10.06 The 2SK3408 features a low on-state resistance and excellentswitching characteristics, and is suitable for applications su

SMD Type MOSFETMOS Field Effect Transistor2SK3405TO-263Unit: mm+0.2Features4.57-0.2+0.11.27-0.14.5-V drive availableLow on-state resistanceRDS(on)1 =9.0m MAX. (VGS =10V, ID =24 A)+0.10.1max1.27-0.1Low gate chargeQG = 34 nC TYP. (ID =48 A, VDD = 16V, VGS =10V) +0.10.81-0.12.54Built-in gate protection diode1Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.2

SMD Type MOSFETN-Channel MOSFET2SK3402-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.2 Features5.30-0.2 +0.80.50 -0.7 VDS S = 60V ID = 36 A (VGS = 10V) RDS(ON) 15m (VGS = 10V)0.127+0.10.80-0.1max RDS(ON) 22m (VGS = 4V) Low Ciss : Ciss = 3200 pF TYP.+ 0.11 Gate2.3 0.60- 0.1+0.154.60 -0.152 DrainDrain3 Sou

isc N-Channel MOSFET Transistor 2SK3402-ZFEATURESDrain Current : I = 36A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 15m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3404FEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3403KFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

isc N-Channel MOSFET Transistor 2SK3403BFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

isc N-Channel MOSFET Transistor 2SK3402FEATURESDrain Current : I = 36A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 15m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor 2SK3404-ZFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 14m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno