2SK3499 MOSFET. Datasheet pdf. Equivalent

2SK3499 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK3499 Datasheet (PDF)

1.1. 2sk3499.pdf Size:229K _toshiba

2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3499 Switching Regulator and DC-DC Converter Applications Unit: mm Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 ? (typ.) • High forward transfer admittance: |Y | = 8.0 S (typ.) fs • Low leakage current: I = 100 µA (max) (V = 400 V) DSS DS • Enhancement-model:

4.1. 2sk349 2sk350.pdf Size:49K _update



4.2. 2sk3498.pdf Size:161K _toshiba

2SK3498 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSV) 2SK3498 DC/DC Converter, Relay Drive and Motor Drive Unit: mm Applications • Low drain-source ON-resistance: RDS (ON) = 4.0 ? (typ.) • High forward transfer admittance: |Yfs| = 0.6 S (typ.) • Low leakage current: IDSS = 100 ?A (max) (VDS = 400 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10

 4.3. 2sk3497.pdf Size:114K _toshiba

2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK3497 High Power Amplifier Application Unit: mm High breakdown voltage: VDSS = 180V Complementary to 2SJ618 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 180 V 1. GATE Gate-source voltage VGSS ±12 V 2. DRAIN (HEAT SINK) DC (Note 1) ID 1

4.4. 2sk3491.pdf Size:29K _sanyo

Ordering number : ENN6959 2SK3491 N-Channel Silicon MOSFET 2SK3491 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • Low Qg. 2083B [2SK3491] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP Package Dimensions unit : mm 2092B [2SK3491] 6.5 2.3 5.0 0.5 4 0.5 0.85

 4.5. 2sk3495.pdf Size:27K _sanyo

Ordering number : ENN6970 2SK3495 N-Channel Silicon MOSFET 2SK3495 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2087A • 4V drive. [2SK3495] 2.5 • Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate Specifications 2.54 2.54 Absolute Maximum Ratings at Ta=25°C

4.6. 2sk3494.pdf Size:73K _panasonic

Power MOSFETs 2SK3494 N-channel enhancement mode MOSFET ¦ Features Unit: mm 4.6±0.2 10.5±0.3 • Low on-resistance, low Qg 1.4±0.1 • High avalanche resistance ¦ Applications • For PDP 1.4±0.1 2.5±0.2 • For high-speed switching 0.8±0.1 2.54±0.3 0 to 0.3 ¦ Absolute Maximum Ratings TC = 25°C (10.2) (8.9) Parameter Symbol Rating Unit 1 2 3 Drain-source surrender voltage VDSS 250 V

4.7. 2sk3496-01mr.pdf Size:117K _fuji

2SK3496-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherw

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