All MOSFET. 2SK3797 Datasheet

 

2SK3797 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3797

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 60 nS

Drain-Source Capacitance (Cd): 270 pF

Maximum Drain-Source On-State Resistance (Rds): 0.43 Ohm

Package: TO220SIS

2SK3797 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3797 Datasheet (PDF)

1.1. 2sk3797.pdf Size:184K _toshiba

2SK3797
2SK3797

2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSVI) 2SK3797 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.32 ? (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 600 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings

4.1. 2sk3798.pdf Size:222K _toshiba

2SK3797
2SK3797

2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIV) 2SK3798 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5? (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C)

4.2. 2sk3799.pdf Size:221K _toshiba

2SK3797
2SK3797

2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOSIV) 2SK3799 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.0 ? (typ.) High forward transfer admittance : |Y | = 6.0 S (typ.) fs Low leakage current : I = 100?A (max) (V = 720 V) DSS DS Enhancement model : V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Maximum Ra

4.3. 2sk3793.pdf Size:175K _nec

2SK3797
2SK3797

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3793 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3793 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3793 Isolated TO-220 FEATURES Super low on-state resistance (Isolated TO-220) RDS(on)1 = 125 m? MAX. (VGS = 10 V, ID = 6 A) RDS(on

4.4. 2sk3794.pdf Size:151K _nec

2SK3797
2SK3797

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3794 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3794 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. TO-251 (MP-3) 2SK3794 TO-252 (MP-3Z) 2SK3794-Z FEATURES Low On-state resistance (TO-251) RDS(on)1 = 44 m? MAX. (VGS = 10 V, ID =

4.5. 2sk3796.pdf Size:1013K _onsemi

2SK3797
2SK3797

Ordering number : EN8636B 2SK3796 N-Channel JFET http://onsemi.com 30V, 0.6 to 3.0mA, 6.5mS, SMCP Applications • Low-frequency general-purpose amplifier, impedance conversion, analog switches applications Features • Small IGSS • Small Ciss Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX 30 V Gate-to-Dr

Datasheet: 2SK3563 , 2SK3567 , 2SK3568 , 2SK3569 , 2SK3625 , 2SK3662 , 2SK3667 , 2SK3669 , IRF530 , 2SK3844 , 2SK3846 , 2SK3847 , 2SK3869 , 2SK3903 , 2SK3904 , 2SK3905 , 2SK3907 .

 


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