2SK3797 PDF and Equivalents Search

 

2SK3797 Specs and Replacement

Type Designator: 2SK3797

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 270 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm

Package: TO220SIS

2SK3797 substitution

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2SK3797 datasheet

 ..1. Size:184K  toshiba
2sk3797.pdf pdf_icon

2SK3797

2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3797 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.32 (typ.) High forward transfer admittance Yfs = 7.5 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute ... See More ⇒

 ..2. Size:279K  inchange semiconductor
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2SK3797

isc N-Channel MOSFET Transistor 2SK3797 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.43 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

 8.1. Size:221K  toshiba
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2SK3797

2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSIV) 2SK3799 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.0 (typ.) High forward transfer admittance Y = 6.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement model V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Max... See More ⇒

 8.2. Size:222K  toshiba
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2SK3797

2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK3798 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 2.5 (typ.) High forward transfer admittance Yfs = 2.8 S (typ.) Low leakage current IDSS = 100 A (VDS = 720 V) Enhancement-mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings ... See More ⇒

Detailed specifications: 2SK3563 , 2SK3567 , 2SK3568 , 2SK3569 , 2SK3625 , 2SK3662 , 2SK3667 , 2SK3669 , IRFB4110 , 2SK3844 , 2SK3846 , 2SK3847 , 2SK3869 , 2SK3903 , 2SK3904 , 2SK3905 , 2SK3907 .

Keywords - 2SK3797 MOSFET specs

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