All MOSFET. 2SK3935 Datasheet

 

2SK3935 Datasheet and Replacement


   Type Designator: 2SK3935
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO220SIS
 

 2SK3935 substitution

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2SK3935 Datasheet (PDF)

 ..1. Size:313K  toshiba
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2SK3935

2SK3935 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3935 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.18 (typ.) High forward transfer admittance : |Yfs| = 10 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 450 V) Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute

 ..2. Size:279K  inchange semiconductor
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2SK3935

isc N-Channel MOSFET Transistor 2SK3935FEATURESDrain Current : I = 17A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 250m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.1. Size:180K  toshiba
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2SK3935

2SK3936 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II -MOS VI) 2SK3936 Switching Regulator Applications Unit: mm Small gate charge: Qg = 60 nC (typ.) Fast reverse recovery time: trr = 380 ns (typ.) Low drain-source ON-resistance: RDS (ON) = 0.2 (typ.) High forward transfer admittance: |Yfs| = 16.5 S (typ.) Low leakage current: IDS

 8.2. Size:288K  toshiba
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2SK3935

2SK3934 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI) 2SK3934 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.23 (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxim

Datasheet: 2SK3847 , 2SK3869 , 2SK3903 , 2SK3904 , 2SK3905 , 2SK3907 , 2SK3911 , 2SK3934 , 2SK3878 , 2SK3947 , 2SK3994 , 2SK4002 , 2SK4012 , 2SK4015 , 2SK4016 , 2SK4018 , 2SK4019 .

History: SVF4N60T | AONP36320 | JCS2N60CB | 2SK3575 | INK0001AC1 | 2SK293 | AONR32314

Keywords - 2SK3935 MOSFET datasheet

 2SK3935 cross reference
 2SK3935 equivalent finder
 2SK3935 lookup
 2SK3935 substitution
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