BUK7608-55 Datasheet and Replacement. Cross Reference Search

BUK7608-55 Datasheet (PDF)

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Philips Semiconductors Product specification TrenchMOS transistor BUK7608-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the devi

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Philips Semiconductors Product specification TrenchMOS transistor BUK7508-55A Standard level FET BUK7608-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 75 AUsing trench tec

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BUK7608-55AN-channel TrenchMOS standard level FETRev. 03 14 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fe

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buk7608-40b.pdf pdf_icon

BUK7608-40BN-channel TrenchMOS standard level FETRev. 04 24 September 2008 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1

Datasheet: BUK7514-30 , BUK7514-55 , BUK7518-55 , BUK7524-55 , BUK7528-55 , BUK7535-55 , BUK7575-55 , BUK7606-30 , IRFZ24N , BUK7610-30 , BUK7614-30 , BUK7618-30 , BUK7618-55 , BUK7620-55 , BUK7624-55 , BUK7628-55 , BUK7635-55 .