BUK7608-55 PDF and Equivalents Search

 

BUK7608-55 Specs and Replacement

Type Designator: BUK7608-55

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 187 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: SOT404

BUK7608-55 substitution

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BUK7608-55 datasheet

 ..1. Size:54K  philips
buk7608-55 2.pdf pdf_icon

BUK7608-55

Philips Semiconductors Product specification TrenchMOS transistor BUK7608-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 75 A trench technology the devi... See More ⇒

 0.1. Size:68K  philips
buk7508 buk7608-55a 1.pdf pdf_icon

BUK7608-55

Philips Semiconductors Product specification TrenchMOS transistor BUK7508-55A Standard level FET BUK7608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V available in TO220AB and SOT404 . ID Drain current (DC) 75 A Using trench tec... See More ⇒

 0.2. Size:785K  nxp
buk7608-55a.pdf pdf_icon

BUK7608-55

BUK7608-55A N-channel TrenchMOS standard level FET Rev. 03 14 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Fe... See More ⇒

 6.1. Size:702K  nxp
buk7608-40b.pdf pdf_icon

BUK7608-55

BUK7608-40B N-channel TrenchMOS standard level FET Rev. 04 24 September 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1... See More ⇒

Detailed specifications: BUK7514-30 , BUK7514-55 , BUK7518-55 , BUK7524-55 , BUK7528-55 , BUK7535-55 , BUK7575-55 , BUK7606-30 , AON7506 , BUK7610-30 , BUK7614-30 , BUK7618-30 , BUK7618-55 , BUK7620-55 , BUK7624-55 , BUK7628-55 , BUK7635-55 .

Keywords - BUK7608-55 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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