2SK4016 PDF Specs and Replacement
Type Designator: 2SK4016
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 13
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 60
nS
Cossⓘ -
Output Capacitance: 270
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5
Ohm
Package:
TO220SIS
-
MOSFET ⓘ Cross-Reference Search
2SK4016 PDF Specs
..1. Size:225K toshiba
2sk4016.pdf 
2SK4016 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS VI) 2SK4016 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.33 (typ.) High forward transfer admittance Yfs = 10 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abso... See More ⇒
..2. Size:279K inchange semiconductor
2sk4016.pdf 
isc N-Channel MOSFET Transistor 2SK4016 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.1. Size:214K toshiba
2sk4015.pdf 
2SK4015 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS VI) 2SK4015 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.60 (typ.) High forward transfer admittance Yfs = 7.4 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Max... See More ⇒
8.2. Size:225K toshiba
2sk4017.pdf 
2SK4017 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4017 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 6.5 0.2 5.2 0.2 0.6 MAX. 4-V gate drive Low drain-source ON-resistance RDS (ON) = 0.07 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS... See More ⇒
8.3. Size:237K toshiba
2sk4014.pdf 
2SK4014 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSIV) 2SK4014 DC/DC Converter, Relay Drive and Motor Drive Unit mm Applications Low drain-source ON-resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V... See More ⇒
8.4. Size:772K toshiba
2sk4019.pdf 
2SK4019 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L - -MOS V) 2SK4019 Chopper Regulator, DC/DC Converter and Motor Drive Unit mm Applications MAX 4 V gate drive Low drain-source ON-resistance RDS (ON) = 0.17 (typ.) High forward transfer admittance Yfs = 4.5 S (ty... See More ⇒
8.5. Size:221K toshiba
2sk4013.pdf 
2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) 2SK4013 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 640 V) Enhancement-model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Ab... See More ⇒
8.6. Size:215K toshiba
2sk4012.pdf 
2SK4012 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK4012 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0. 33 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M... See More ⇒
8.7. Size:775K toshiba
2sk4018.pdf 
2SK4018 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L - -MOS V) 2SK4018 Chopper Regulator, DC/DC Converter and Motor Drive Unit mm Applications MAX 4 V gate drive Low drain-source ON-resistance RDS (ON) = 0.28 (typ.) High forward transfer admittance Yfs ... See More ⇒
8.8. Size:117K hitachi
2sk401.pdf 
"2SK401" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK401" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK401" Powered by ICminer.com Electronic-Library Service CopyRight 2003 ... See More ⇒
8.9. Size:279K inchange semiconductor
2sk4015.pdf 
isc N-Channel MOSFET Transistor 2SK4015 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.86 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
8.10. Size:354K inchange semiconductor
2sk4017.pdf 
isc N-Channel MOSFET Transistor 2SK4017 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 0.1 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.11. Size:240K inchange semiconductor
2sk4014.pdf 
isc N-Channel MOSFET Transistor 2SK4014 I2SK4014 FEATURES Low drain-source on-resistance RDS(on) 2.0 . Enhancement mode Vth = 2.0 to4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION DC-DC Converter, Relay Drive and Motor Drive Applications ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
8.12. Size:355K inchange semiconductor
2sk4019.pdf 
isc N-Channel MOSFET Transistor 2SK4019 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.23 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.13. Size:275K inchange semiconductor
2sk4013.pdf 
iscN-Channel MOSFET Transistor 2SK4013 FEATURES Low drain-source on-resistance RDS(ON) = 1.7 (MAX) Enhancement mode Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT... See More ⇒
8.14. Size:279K inchange semiconductor
2sk4012.pdf 
isc N-Channel MOSFET Transistor 2SK4012 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
8.15. Size:355K inchange semiconductor
2sk4018.pdf 
isc N-Channel MOSFET Transistor 2SK4018 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.35 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
8.16. Size:276K inchange semiconductor
2sk401.pdf 
isc N-Channel MOSFET Transistor 2SK401 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) @ V = 15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
Detailed specifications: 2SK3911
, 2SK3934
, 2SK3935
, 2SK3947
, 2SK3994
, 2SK4002
, 2SK4012
, 2SK4015
, 2SK3878
, 2SK4018
, 2SK4019
, 2SK4020
, 2SK4021
, 2SK4022
, 2SK4103
, 2SK4104
, 2SK4105
.
Keywords - 2SK4016 MOSFET specs
2SK4016 cross reference
2SK4016 equivalent finder
2SK4016 pdf lookup
2SK4016 substitution
2SK4016 replacement
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