2SK4103 Specs and Replacement
Type Designator: 2SK4103
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ -
Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: PWMOLD
- MOSFET ⓘ Cross-Reference Search
2SK4103 datasheet
..1. Size:296K toshiba
2sk4103.pdf 
2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK4103 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 2.8S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximu... See More ⇒
8.1. Size:206K toshiba
2sk4104.pdf
2SK4104 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4104 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Yfs = 3.5 S (typ.) Low leakage current IDSS = 100 A (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M... See More ⇒
8.2. Size:175K toshiba
2sk4106.pdf
2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4106 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.4 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absol... See More ⇒
8.3. Size:199K toshiba
2sk4105.pdf
2SK4105 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4105 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.75 (typ.) High forward transfer admittance Yfs = 6.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abso... See More ⇒
8.4. Size:281K toshiba
2sk4108.pdf
2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS VI) 2SK4108 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0. 21 (typ.) High forward transfer admittance Yfs = 14 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Max... See More ⇒
8.5. Size:239K toshiba
2sk4107.pdf
2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOS VI) 2SK4107 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0. 33 (typ.) High forward transfer admittance Yfs = 8.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 ... See More ⇒
8.6. Size:45K sanyo
2sk4101ls.pdf
Ordering number ENA0745 2SK4101LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4101LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specification... See More ⇒
8.7. Size:97K sanyo
2sk4100ls.pdf
www.DataSheet4U.com Ordering number ENA0778 2SK4100LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4100LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guaran... See More ⇒
8.8. Size:50K hitachi
2sk410.pdf
2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features High breakdown voltage You can decrease handling current. Included gate protection diode No secondary breakdown Wide area of safe operation Simple bias circuitry No thermal runaway Outline 2SK410 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to sourc... See More ⇒
8.9. Size:279K inchange semiconductor
2sk4101ls.pdf
isc N-Channel MOSFET Transistor 2SK4101LS FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.1 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.10. Size:279K inchange semiconductor
2sk4100ls.pdf
isc N-Channel MOSFET Transistor 2SK4100LS FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.35 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
8.11. Size:286K inchange semiconductor
2sk4108.pdf
isc N-Channel MOSFET Transistor 2SK4108 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
Detailed specifications: 2SK4012, 2SK4015, 2SK4016, 2SK4018, 2SK4019, 2SK4020, 2SK4021, 2SK4022, AO3401, 2SK4104, 2SK4105, 2SK4106, 2SK4107, 2SK4108, 2SK4110, 2SK4111, 2SK4112
Keywords - 2SK4103 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
