2SK4112 Specs and Replacement
Type Designator: 2SK4112
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ -
Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220NIS
- MOSFET ⓘ Cross-Reference Search
2SK4112 datasheet
..1. Size:210K toshiba
2sk4112.pdf 
2SK4112 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4112 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.75 (typ.) High forward transfer admittance Yfs = 5.5S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum ... See More ⇒
8.1. Size:240K toshiba
2sk4111.pdf
2SK4111 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4111 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.54 (typ.) High forward transfer admittance Yfs = 8.5S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu... See More ⇒
8.2. Size:343K toshiba
2sk4115.pdf
2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( - MOS ) 2SK4115 Switching Regulator Applications Unit mm 3.2 0.2 15.9max. Low drain-source ON-resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement mode Vth = 2.0 to 4.0 V ... See More ⇒
8.3. Size:202K toshiba
2sk4110.pdf
2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK4110 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.9 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Ma... See More ⇒
8.4. Size:210K toshiba
2sk4113.pdf
2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK4113 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 2.0 (typ.) High forward transfer admittance Yfs = 4.5 S (typ.) Low leakage current IDSS = 100 A (VDS = 720 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum... See More ⇒
8.5. Size:162K toshiba
2sk4114.pdf
2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSIV) 2SK4114 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 2.2 (typ.) High forward transfer admittance Yfs = 3.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 720 V) Enhancement model Vth = 4.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Abso... See More ⇒
8.6. Size:52K sanyo
2sk4118ls.pdf
Ordering number ENA0829 2SK4118LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4118LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications ... See More ⇒
8.7. Size:52K sanyo
2sk4119ls.pdf
Ordering number ENA0830 2SK4119LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4119LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications ... See More ⇒
8.8. Size:270K sanyo
2sk4116ls.pdf
Ordering number ENA0790A 2SK4116LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4116LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications... See More ⇒
8.9. Size:270K sanyo
2sk4117ls.pdf
Ordering number ENA0791A 2SK4117LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4117LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications... See More ⇒
8.10. Size:282K inchange semiconductor
2sk4115.pdf
iscN-Channel MOSFET Transistor 2SK4115 FEATURES Low drain-source on-resistance RDS(ON) = 2.0 (MAX) Enhancement mode Vth = 2 to 4 V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT... See More ⇒
8.11. Size:280K inchange semiconductor
2sk4118ls.pdf
isc N-Channel MOSFET Transistor 2SK4118LS FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.34 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.12. Size:279K inchange semiconductor
2sk4119ls.pdf
isc N-Channel MOSFET Transistor 2SK4119LS FEATURES Drain Current I = 21A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.26 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.13. Size:280K inchange semiconductor
2sk4116ls.pdf
isc N-Channel MOSFET Transistor 2SK4116LS FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.54 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
8.14. Size:278K inchange semiconductor
2sk4117ls.pdf
isc N-Channel MOSFET Transistor 2SK4117LS FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.42 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole... See More ⇒
Detailed specifications: 2SK4103, 2SK4104, 2SK4105, 2SK4106, 2SK4107, 2SK4108, 2SK4110, 2SK4111, AON7410, 2SK4113, 2SK4114, TJ120F06J3, TK07H90A, TK09H90A, TK100F04K3L, TK12D60U, TK13H90A1
Keywords - 2SK4112 MOSFET specs
2SK4112 cross reference
2SK4112 equivalent finder
2SK4112 pdf lookup
2SK4112 substitution
2SK4112 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
