TK150F04K3L MOSFET. Datasheet pdf. Equivalent
Type Designator: TK150F04K3L
Marking Code: K150F04K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 150 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 190 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 2000 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
Package: TO220SM
TK150F04K3L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK150F04K3L Datasheet (PDF)
tk150f04k3.pdf
TK150F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK150F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7m (typ.) 10.0 0.3 High forward transfer admittance: |Yfs| = 210 S (typ.) 0.4 0.19.5 0.2 Low leakage current: IDSS = 10 A (max) (VDS
tk150e09ne.pdf
TK150E09NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS-H) TK150E09NE Unit: mm10.20.3 3.70.1 1.270.1 E-Bike A Low drain-source ON resistance : R = 3.6 m (typ.) (V = 10 V) DS (ON) GS Low leakage current : I = 10 A (max) (V = 85 V) DSS DS Enhancement mode : V = 2.5~4.5 V (V = 10 V, I = 1.0 mA) th DS DAbsolute Maximum Ratin
ixtk150n15p ixtq150n15p.pdf
IXTK 150N15PPolarHTTMVDSS = 150 VIXTQ 150N15PPower MOSFETID25 = 150 A RDS(on) 13 m N-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175 C; RGS = 1 M 150 VGD (TAB)VGS Continuous 20 VDSVGSM Transient 30 VID25 TC = 25
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: DMP2215L
History: DMP2215L
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