BUK7618-30 Datasheet and Replacement

Philips Semiconductors Product specification TrenchMOS transistor BUK7618-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 55 Atrench technology. The devi

Philips Semiconductors Product specification TrenchMOS transistor BUK7618-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 57 Atrench technology the devi

BUK7618-55N-channel TrenchMOS standard level FETRev. 2 26 April 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fea

Philips Semiconductors Product specification TrenchMOS transistor BUK7615-100A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the d

Philips Semiconductors Product specification TrenchMOS transistor BUK7614-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 68 Atrench technology the devi

BUK7619-100BN-channel TrenchMOS standard level FETRev. 01 10 October 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic packageusing NXP High Performance Automotive (HPA) TrenchMOS technology.1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compatible1.3

BUK7516-55A; BUK7616-55ATrenchMOS standard level FETRev. 01 18 January 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7516-55A in SOT78 (TO-220AB)BUK7616-55A in SOT404 (D 2-PAK).2. Features TrenchMOS tec

Philips Semiconductors Product specification TrenchMOS transistor BUK7614-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 68 Atrench technology the devi

Philips Semiconductors Product specification TrenchMOS transistor BUK7614-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 69 Atrench technology. The devi

BUK75/76150-55ATrenchMOS standard level FETRev. 02 25 November 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips General-Purpose Automotive (GPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible.1.3 Applicat

BUK75150-55A;BUK76150-55ATrenchMOS standard level FETRev. 01 10 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK75150-55A in SOT78 (TO-220AB)BUK76150-55A in SOT404 (D 2-PAK).2. Features TrenchMOS

Philips Semiconductors Product specification TrenchMOS transistor BUK7615-100A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vsuitable for surface mounting. Using ID Drain current (DC) 75 Atrench technology the d

BUK7610-55ALN-channel TrenchMOS standard level FETRev. 02 9 January 2008 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the appropri

BUK75/76150-55ATrenchMOS standard level FETRev. 02 25 November 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips General-Purpose Automotive (GPA) TrenchMOS technology.1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible.1.3 Applicat

BUK761R8-30CN-channel TrenchMOS standard level FETRev. 02 20 August 2007 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package, using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology.1.2 Features 175 C rated Q101 compliant Standard level compatible TrenchMOS technol

Philips Semiconductors Product specification TrenchMOS transistor BUK7610-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting using ID Drain current (DC) 75 Atrench technology. The devi

Philips Semiconductors Product specification TrenchMOS transistor BUK7514-55A Standard level FET BUK7614-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 73 AUsing trench tec

BUK7613-60EN-channel TrenchMOS standard level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitiv

BUK761R5-40EN-channel TrenchMOS standard level FET7 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a SOT404A package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rated

BUK761R7-40EN-channel TrenchMOS standard level FET4 June 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a SOT404A package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rated

BUK761R3-30EN-channel TrenchMOS standard level FETRev. 3 16 May 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.1.2 Features and benefits AEC Q101 compliant

BUK7611-55AN-channel TrenchMOS standard level FETRev. 02 16 June 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Fe

BUK7610-100BN-channel TrenchMOS standard level FET6 July 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.1.2 Features and ben

BUK7613-75BN-channel TrenchMOS standard level FETRev. 3 27 December 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

BUK7610-55ALN-channel TrenchMOS standard level FETRev. 02 9 January 2008 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized for linear operation. This product has been designed and qualified to the a

BUK7613-100EN-channel TrenchMOS standard level FET5 October 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repeti

BUK7611-55BN-channel TrenchMOS standard level FETRev. 3 31 January 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

BUK761R4-30EN-channel TrenchMOS standard level FET5 October 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repeti

BUK761R6-40EN-channel TrenchMOS standard level FET5 September 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in a SOT404A package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits AEC Q101 compliant Repetitive avalanche rate