All MOSFET. TK20A60T Datasheet

 

TK20A60T MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK20A60T
   Marking Code: K20A60T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 3800 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO220SIS

 TK20A60T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK20A60T Datasheet (PDF)

 ..1. Size:205K  toshiba
 tk20a60t.pdf

TK20A60T TK20A60T

TK20A60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20A60T Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute M

 7.1. Size:234K  toshiba
 tk20a60w5.pdf

TK20A60T TK20A60T

TK20A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK20A60W5TK20A60W5TK20A60W5TK20A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.15 (typ.) by used to Super Junction Str

 7.2. Size:273K  toshiba
 tk20a60u.pdf

TK20A60T TK20A60T

TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20A60U Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

 7.3. Size:243K  toshiba
 tk20a60w.pdf

TK20A60T TK20A60T

TK20A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20A60WTK20A60WTK20A60WTK20A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 7.4. Size:253K  inchange semiconductor
 tk20a60w5.pdf

TK20A60T TK20A60T

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK20A60W5, ITK20A60W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.15 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3.0 to 4.5V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regula

 7.5. Size:253K  inchange semiconductor
 tk20a60u.pdf

TK20A60T TK20A60T

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK20A60U, ITK20A60UFEATURESLow drain-source on-resistance: RDS(ON) = 0.165 (typ.)Low leakage current: IDSS = 100A (max) (VDS = 600 V)Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONS

 7.6. Size:253K  inchange semiconductor
 tk20a60w.pdf

TK20A60T TK20A60T

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK20A60W, ITK20A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.155 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulat

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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