All MOSFET. TK65A10N1 Datasheet

 

TK65A10N1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK65A10N1
   Marking Code: K65A10N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 81 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: TO220SIS

 TK65A10N1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK65A10N1 Datasheet (PDF)

 ..1. Size:237K  toshiba
 tk65a10n1.pdf

TK65A10N1 TK65A10N1

TK65A10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK65A10N1TK65A10N1TK65A10N1TK65A10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 4.0 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3) Enha

 ..2. Size:252K  inchange semiconductor
 tk65a10n1.pdf

TK65A10N1 TK65A10N1

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK65A10N1ITK65A10N1FEATURESLow drain-source on-resistance:RDS(ON) = 4.8m (VGS = 10 V)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXI

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BRFL24N50 | SI5402BDC | NVMFS020N06C | 3N211 | UT2305A

 

 
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