TPC6004 MOSFET. Datasheet pdf. Equivalent
Type Designator: TPC6004
Marking Code: S2C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 17 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: VS6
TPC6004 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPC6004 Datasheet (PDF)
tpc6004.pdf
TPC6004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 1
tpc6007-h.pdf
TPC6007-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6007-H High-Efficiency DC/DC Converter Applications Unit: mm Small footprint due to small and thin package High-speed switching Small gate charge: Qsw = 1.8 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 40 m (typ.) High forward transfer admittance: |
tpc6008-h.pdf
TPC6008-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC6008-HTPC6008-HTPC6008-HTPC6008-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 0.9 nC (typ.)(4) Lo
tpc6006-h.pdf
TPC6006-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6006-H Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: Qsw = 2.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 59 m (typ.) High forward transfer
tpc6009-h.pdf
TPC6009-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC6009-HTPC6009-HTPC6009-HTPC6009-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 1.0 nC (typ.)(4) Lo
tpc6005.pdf
TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6005 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: R = 21 m (typ.) DS (ON) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancementmode: Vth = 0.5 to 1.2 V (VDS =
tpc6001.pdf
TPC6001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6001 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 22 m (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10
tpc6003.pdf
TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6003 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 7 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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