TPC6005 MOSFET. Datasheet pdf. Equivalent
Type Designator: TPC6005
Marking Code: S2E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: VS6
TPC6005 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPC6005 Datasheet (PDF)
tpc6005.pdf
TPC6005 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6005 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: R = 21 m (typ.) DS (ON) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancementmode: Vth = 0.5 to 1.2 V (VDS =
tpc6007-h.pdf
TPC6007-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6007-H High-Efficiency DC/DC Converter Applications Unit: mm Small footprint due to small and thin package High-speed switching Small gate charge: Qsw = 1.8 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 40 m (typ.) High forward transfer admittance: |
tpc6008-h.pdf
TPC6008-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC6008-HTPC6008-HTPC6008-HTPC6008-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 0.9 nC (typ.)(4) Lo
tpc6006-h.pdf
TPC6006-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC6006-H Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: Qsw = 2.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 59 m (typ.) High forward transfer
tpc6009-h.pdf
TPC6009-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC6009-HTPC6009-HTPC6009-HTPC6009-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 1.0 nC (typ.)(4) Lo
tpc6001.pdf
TPC6001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC6001 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 22 m (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10
tpc6003.pdf
TPC6003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6003 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 7 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10
tpc6004.pdf
TPC6004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 1
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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