All MOSFET. 2N6798JANTX Datasheet

 

2N6798JANTX MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N6798JANTX

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 5.5 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 900 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: TO205AF

2N6798JANTX Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N6798JANTX Datasheet (PDF)

4.1. 2n6798u.pdf Size:175K _update-mosfet

2N6798JANTX
2N6798JANTX

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS JAN 2N6798 2N6798U JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltag

4.2. 2n6798 irff230.pdf Size:131K _international_rectifier

2N6798JANTX
2N6798JANTX

PD -90431C IRFF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6798 HEXFETTRANSISTORS JANTXV2N6798 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF230 200V 0.40Ω 5.5A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing

 4.3. 2n6796 2n6798 2n6800 2n6802.pdf Size:66K _omnirel

2N6798JANTX
2N6798JANTX

2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800 2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES •Low RDS(on) •Ease of Paralleling •Qualified to MIL-PRF-19500/557 DESCRIPTIO

4.4. 2n6798.pdf Size:21K _semelab

2N6798JANTX
2N6798JANTX

2N6798 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE TRANSISTOR FEATURES • V(BR)DSS = 200V • ID = 5.5A ! • RDSON = 0.40

 4.5. 2n6798u.pdf Size:175K _microsemi

2N6798JANTX
2N6798JANTX

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS JAN 2N6798 2N6798U JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltag

Datasheet: 2N6796 , 2N6796JANTX , 2N6796JANTXV , 2N6796SM , 2N6797 , 2N6797LCC4 , 2N6797-SM , 2N6798 , BF245A , 2N6798JANTXV , 2N6798SM , 2N6799 , 2N6799LCC4 , 2N6799-SM , 2N6800 , 2N6800JANTX , 2N6800JANTXV .

 

 
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