TPC8013-H
MOSFET. Datasheet pdf. Equivalent
Type Designator: TPC8013-H
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.9
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 48
nC
trⓘ - Rise Time: 9.8
nS
Cossⓘ -
Output Capacitance: 980
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065
Ohm
Package:
SOP8
TPC8013-H
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPC8013-H
Datasheet (PDF)
..1. Size:180K toshiba
tpc8013-h.pdf 
TPC8013-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8013-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg = 48 nc (typ.) Low drain-source ON resistance: RDS (ON)
8.1. Size:79K toshiba
tpc8016-h.pdf
TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8016-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg = 48 nc (typ.) Low drain-source ON resistance: R = 3.7 m
8.2. Size:283K toshiba
tpc8017-h.pdf
TPC8017-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPC8017-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg = 25 nC (typ.) Low drain-source ON resistance: RDS
8.3. Size:175K toshiba
tpc8010-h.pdf
TPC8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8010-H DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Q = 18 nC (typ.) g Low drain-source ON resistance: RDS (ON) = 12 m (typ.) High fo
8.4. Size:469K toshiba
tpc8018-h.pdf
TPC8018-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8018-H High-Speed and High-Efficiency DC/DC Converter Unit: mmApplications Notebook PC Applications Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 12 nC (typ.) Low drain-source ON
8.5. Size:241K toshiba
tpc8014.pdf
TPC8014 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8014 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 11 m (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage curre
8.6. Size:125K toshiba
tpc8012-h.pdf
TPC8012-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV) TPC8012-H Switching Regulator Application Unit: mmDC-DC Converters Low drain-source ON resistance: RDS (ON) = 0.28 (typ.) High forward transfer admittance: |Y | = 1.35 S (typ.) fs Low leakage current: I = 100 A (max) (V = 200 V) DSS DS Enhancement mode: Vth = 3.0 to 5.0 V (VD
8.7. Size:860K cn vbsemi
tpc8018-h.pdf
TPC8018-Hwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
