All MOSFET. TPC8018-H Datasheet

 

TPC8018-H MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPC8018-H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 1045 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: SOP8

 TPC8018-H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPC8018-H Datasheet (PDF)

Datasheet: TPC8006-H , TPC8009-H , TPC8010-H , TPC8012-H , TPC8013-H , TPC8014 , TPC8016-H , TPC8017-H , IRF540N , TPC8020-H , TPC8021-H , TPC8022-H , TPC8024-H , TPC8025 , TPC8026 , TPC8030 , TPC8031-H .

 

 
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