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TPC8111 PDF Specs and Replacement


   Type Designator: TPC8111
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP8
 

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TPC8111 PDF Specs

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TPC8111

TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8111 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 8.1 m (typ.) High forward transfer admittance Yfs = 23 S (typ.) Low leakage curre... See More ⇒

 8.1. Size:214K  toshiba
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TPC8111

TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8117 Lithium Ion Battery Applications Unit mm Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 3.0 m (typ.) High forward transfer admittance Yfs = 54 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -... See More ⇒

 8.2. Size:216K  toshiba
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TPC8111

TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 17 m (typ.) DS (ON) High forward transfer admittance Y = 16 S (typ.) fs Low leakage ... See More ⇒

 8.3. Size:278K  toshiba
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TPC8111

TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8114 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 3.1 m (typ.) High forward transfer admittance Yfs = 47 S (typ.) Low leakage curre... See More ⇒

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Detailed specifications: TPC8054-H , TPC8060-H , TPC8104-H , TPC8105-H , TPC8107 , TPC8108 , TPC8109 , TPC8110 , 2N7002 , TPC8112 , TPC8113 , TPC8114 , TPC8115 , TPC8116-H , TPC8117 , TPC8118 , TPC8119 .

Keywords - TPC8111 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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