TPC8114 MOSFET. Datasheet pdf. Equivalent

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TPC8114 Datasheet (PDF)

1.1. tpc8114.pdf Size:278K _toshiba2

TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8114 Lithium Ion Battery Applications Unit: mm Notebook PC Applications Portable Equipment Applications � Small footprint due to small and thin package � Low drain-source ON resistance: RDS (ON) = 3.1 m? (typ.) � High forward transfer admittance: |Yfs| = 47 S (typ.) � Low leakage current: IDSS = -10

4.1. tpc8117.pdf Size:214K _toshiba2

TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8117 Lithium Ion Battery Applications Unit: mm Notebook PC Applications • Small footprint due to small and thin package • Low drain-source ON-resistance : RDS (ON) = 3.0 mΩ (typ.) • High forward transfer admittance : |Yfs| = 54 S (typ.) • Low leakage current: IDSS = -10 μA (max) (VDS = -

4.2. tpc8119.pdf Size:256K _toshiba2

TPC8119 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC8119 Lithium-Ion Battery Applications Unit: mm Load switch Applications Notebook PC Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 10 mΩ (typ.) • High forward transfer admittance: |Yfs| = 24 S (typ.) • Low leakage current: IDSS

 4.3. tpc8112.pdf Size:274K _toshiba2

TPC8112 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS?) TPC8112 Lithium Ion Battery Applications Unit: mm Notebook PC Applications Portable Equipment Applications � Small footprint due to small and thin package � Low drain-source ON resistance: RDS (ON) = 5.0m? (typ.) � High forward transfer admittance: |Yfs| = 31 S (typ.) � Low leakage current: IDSS = -10 �

4.4. tpc8118.pdf Size:196K _toshiba2

TPC8118 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8118 Notebook PC Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 5.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 36 S (typ.) • Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) • Enhancement mode: Vth = -

 4.5. tpc8110.pdf Size:216K _toshiba2

TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 Lithium Ion Battery Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: R = 17 mΩ (typ.) DS (ON) • High forward transfer admittance: |Y | = 16 S (typ.) fs • Low leakage

4.6. tpc8113.pdf Size:273K _toshiba2

TPC8113 東芝電界効果トランジスタ シリコンPチャネルMOS形 (U-MOS IV) TPC8113 ○ リチウムイオン2次電池用 単位: mm ○ ノートブックPC用 ○ 携帯電子機器用 • 小型、薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 8 mΩ (標準) • 順方向伝達アドミタンスが高い。 : |Yfs| = 23 S (標

4.7. tpc8116-h.pdf Size:279K _toshiba2

TPC8116-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8116-H High Efficiency DC／DC Converter Applications Unit: mm Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications • Small footprint due to a small and thin package • High speed switching • Small gate charge: QSW = 9.7 nC (typ.) • Low

4.8. tpc8111.pdf Size:231K _toshiba2

TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8111 Lithium Ion Battery Applications Unit: mm Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 23 S (typ.) • Low leakage curre

4.9. tpc8115.pdf Size:280K _toshiba2

TPC8115 東芝電界効果トランジスタ シリコンPチャネルMOS形 (U-MOS IV) TPC8115 ○ リチウムイオン2次電池用 単位: mm ○ ノートブックPC用 ○ 携帯電子機器用 • 小型、薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 6.5 mΩ (標準) • 順方向伝達アドミタンスが高い。 : |Yfs| = 40 S (�

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