TPC8203 Datasheet and Replacement
Type Designator: TPC8203
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 380 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: SOP8
TPC8203 substitution
TPC8203 Datasheet (PDF)
tpc8209.pdf

TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPC8209 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 30 m (typ.) DS (ON) High forward transfer admittance: |Y | = 10 S (typ.) fs Low leakage current:
tpc8208.pdf

TPC8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8208 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 38 m (typ.) High forward transfer admittance: |Yfs| = 6.3 S (typ.) Low leakage curre
tpc8206.pdf

TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8206 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 40 m (typ.) DS (ON) High forward transfer admittance: |Y | = 7.0 S (typ.) fs Low leakage c
Datasheet: TPC8114 , TPC8115 , TPC8116-H , TPC8117 , TPC8118 , TPC8119 , TPC8121 , TPC8122 , TK10A60D , TPC8206 , TPC8207 , TPC8208 , TPC8209 , TPC8210 , TPC8211 , TPC8212-H , TPC8213-H .
History: IXFN140N20P | SIS782DN
Keywords - TPC8203 MOSFET datasheet
TPC8203 cross reference
TPC8203 equivalent finder
TPC8203 lookup
TPC8203 substitution
TPC8203 replacement
History: IXFN140N20P | SIS782DN



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