TPC8203 MOSFET Datasheet: N-Ch, 30V, 6A. Full specification with pinout and replacement list

TPC8203 Specs and Replacement

Type Designator: TPC8203

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: SOP8

TPC8203 substitution

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TPC8203 datasheet

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TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPC8209 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance R = 30 m (typ.) DS (ON) High forward transfer admittance Y = 10 S (typ.) fs Low leakage current ... See More ⇒

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TPC8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC8208 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 38 m (typ.) High forward transfer admittance Yfs = 6.3 S (typ.) Low leakage curre... See More ⇒

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TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8206 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 40 m (typ.) DS (ON) High forward transfer admittance Y = 7.0 S (typ.) fs Low leakage c... See More ⇒