TPC8214-H
MOSFET. Datasheet pdf. Equivalent
Type Designator: TPC8214-H
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 2.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.5
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 75
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18
Ohm
Package:
SOP8
TPC8214-H
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPC8214-H
Datasheet (PDF)
..1. Size:222K toshiba
tpc8214-h.pdf 
TPC8214-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8214-H High-Efficiency DCDC Converter Applications Unit: mmCCFL Inverters Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 2.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 130 m (typ.) High forward
8.1. Size:468K toshiba
tpc8212-h.pdf
TPC8212-H www.DataSheet4U.comTOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8212-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable-Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 5.5 nC (typ.) Low drain-source O
8.2. Size:222K toshiba
tpc8210.pdf
TPC8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8210 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Low drain-source ON resistance: RDS (ON) = 11 m (typ.) High forward transfer admittance: |Y | = 13 S (typ.) fs Low leakage current: I = 10 A (max) (V = 30 V) DSS DS Enhancement
8.3. Size:213K toshiba
tpc8213-h.pdf
TPC8213-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8213-H High-Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications Portable-Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 2.9 nC (typ.) Low drain-source ON-resistance: RDS
8.4. Size:218K toshiba
tpc8218-h.pdf
TPC8218-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8218-H DC-DC Converter Applications Unit: mmCCFL Inverters Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 2.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 38 m (typ.) High forward transfer admittance: |Yfs| = 12 S (
8.5. Size:159K toshiba
tpc8211.pdf
TPC8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8211 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Low drain-source ON resistance: RDS (ON) = 25 m (typ.) High forward transfer admittance: |Y | = 7.0 S (typ.) fs Low leakage current: I = 10 A (max) (V = 30 V) DSS DS Enhancemen
8.6. Size:234K toshiba
tpc8216-h.pdf
TPC8216-H www.DataSheet4U.comTOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8216-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.4 nC (typ.) Low drain-source ON-resistance
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