TPC8216-H Specs and Replacement
Type Designator: TPC8216-H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.3 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP8
TPC8216-H substitution
- MOSFET ⓘ Cross-Reference Search
TPC8216-H datasheet
tpc8216-h.pdf
TPC8216-H www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8216-H High Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 3.4 nC (typ.) Low drain-source ON-resistance... See More ⇒
tpc8212-h.pdf
TPC8212-H www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8212-H High-Efficiency DC/DC Converter Applications Unit mm Notebook PC Applications Portable-Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge QSW = 5.5 nC (typ.) Low drain-source O... See More ⇒
tpc8210.pdf
TPC8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8210 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Low drain-source ON resistance RDS (ON) = 11 m (typ.) High forward transfer admittance Y = 13 S (typ.) fs Low leakage current I = 10 A (max) (V = 30 V) DSS DS Enhancement... See More ⇒
tpc8214-h.pdf
TPC8214-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8214-H High-Efficiency DC DC Converter Applications Unit mm CCFL Inverters Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 2.0 nC (typ.) Low drain-source ON-resistance RDS (ON) = 130 m (typ.) High forward ... See More ⇒
Detailed specifications: TPC8207, TPC8208, TPC8209, TPC8210, TPC8211, TPC8212-H, TPC8213-H, TPC8214-H, AON7506, TPC8218-H, TPC8301, TPC8302, TPC8303, TPC8401, TPC8404, TPC8405, TPC8406-H
Keywords - TPC8216-H MOSFET specs
TPC8216-H cross reference
TPC8216-H equivalent finder
TPC8216-H pdf lookup
TPC8216-H substitution
TPC8216-H replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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