All MOSFET. TPC8218-H Datasheet

 

TPC8218-H Datasheet and Replacement


   Type Designator: TPC8218-H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1.8 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm
   Package: SOP8
 

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TPC8218-H Datasheet (PDF)

 ..1. Size:218K  toshiba
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TPC8218-H

TPC8218-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8218-H DC-DC Converter Applications Unit: mmCCFL Inverters Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 2.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 38 m (typ.) High forward transfer admittance: |Yfs| = 12 S (

 8.1. Size:468K  toshiba
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TPC8218-H

TPC8212-H www.DataSheet4U.comTOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8212-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable-Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 5.5 nC (typ.) Low drain-source O

 8.2. Size:222K  toshiba
tpc8210.pdf pdf_icon

TPC8218-H

TPC8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8210 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Low drain-source ON resistance: RDS (ON) = 11 m (typ.) High forward transfer admittance: |Y | = 13 S (typ.) fs Low leakage current: I = 10 A (max) (V = 30 V) DSS DS Enhancement

 8.3. Size:222K  toshiba
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TPC8218-H

TPC8214-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8214-H High-Efficiency DCDC Converter Applications Unit: mmCCFL Inverters Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 2.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 130 m (typ.) High forward

Datasheet: TPC8208 , TPC8209 , TPC8210 , TPC8211 , TPC8212-H , TPC8213-H , TPC8214-H , TPC8216-H , 20N50 , TPC8301 , TPC8302 , TPC8303 , TPC8401 , TPC8404 , TPC8405 , TPC8406-H , TPC8A01 .

History: SUD40N04-10A | FDD9407 | 2SK3686-01 | QS5U13 | SM5A24NSF | MSJAC11N65Y | UTT16P10

Keywords - TPC8218-H MOSFET datasheet

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