TPC8218-H PDF and Equivalents Search

 

TPC8218-H Specs and Replacement

Type Designator: TPC8218-H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.8 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm

Package: SOP8

TPC8218-H substitution

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TPC8218-H datasheet

 ..1. Size:218K  toshiba
 tpc8218-h.pdf pdf_icon

TPC8218-H

TPC8218-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8218-H DC-DC Converter Applications Unit mm CCFL Inverters Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 2.6 nC (typ.) Low drain-source ON-resistance RDS (ON) = 38 m (typ.) High forward transfer admittance Yfs = 12 S (... See More ⇒

 8.1. Size:468K  toshiba
 tpc8212-h.pdf pdf_icon

TPC8218-H

TPC8212-H www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8212-H High-Efficiency DC/DC Converter Applications Unit mm Notebook PC Applications Portable-Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge QSW = 5.5 nC (typ.) Low drain-source O... See More ⇒

 8.2. Size:222K  toshiba
 tpc8210.pdf pdf_icon

TPC8218-H

TPC8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8210 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Low drain-source ON resistance RDS (ON) = 11 m (typ.) High forward transfer admittance Y = 13 S (typ.) fs Low leakage current I = 10 A (max) (V = 30 V) DSS DS Enhancement... See More ⇒

 8.3. Size:222K  toshiba
 tpc8214-h.pdf pdf_icon

TPC8218-H

TPC8214-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8214-H High-Efficiency DC DC Converter Applications Unit mm CCFL Inverters Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 2.0 nC (typ.) Low drain-source ON-resistance RDS (ON) = 130 m (typ.) High forward ... See More ⇒

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Detailed specifications: TPC8208, TPC8209, TPC8210, TPC8211, TPC8212-H, TPC8213-H, TPC8214-H, TPC8216-H, STP80NF70, TPC8301, TPC8302, TPC8303, TPC8401, TPC8404, TPC8405, TPC8406-H, TPC8A01

Keywords - TPC8218-H MOSFET specs

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