TPCA8005-H MOSFET. Datasheet pdf. Equivalent
Type Designator: TPCA8005-H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 27 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 525 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: SOP-ADVANCE
TPCA8005-H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPCA8005-H Datasheet (PDF)
tpca8005-h.pdf
TPCA8005-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TENTATIVE TPCA8005-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A8 5Portable Equipment Applications 0.150.05 Small footprint due to small and thin package High speed switching 41 0.595
tpca8009-h.pdf
TPCA8009-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCA8009-H High Speed Switching Applications Unit: mmSwitching Regulator Applications 0.40.11.270.05 M ADC/DC Converter Applications 8 50.150.05 Small footprint due to a small and thin package High-speed switching 41 0.595 Small gate charge: Q = 3.7 nC (typ.)
tpca8004-h.pdf
TPCA8004-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCA8004-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications 0.40.11.27Portable Equipment Applications 0.50.10.05 M A8 5 Small footprint due to small and thin package 0.150.05 High speed switching Small gate charge: Qg =37
tpca8008-h.pdf
TPCA8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCA8008-H High Speed Switching Applications Unit: mmSwitching Regulator Applications 0.40.11.270.05 M ADC/DC Converter Applications 8 50.150.05 Small footprint due to a small and thin package High-speed switching 41 0.595 Small gate charge: QSW = 3.7 nC (typ.)
tpca8003-h.pdf
TPCA8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCA8003-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A8 5Portable Equipment Applications 0.150.05 Small footprint due to small and thin package High speed switching 41 0.595 Small gate c
tpca8006-h.pdf
TPCA8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVII) TPCA8006-H Switching Regulator Applications Unit: mmMotor Drive Applications 0.40.11.270.05 M A8 5DCDC Converter Applications 0.150.05 Small footprint due to a small and thin package High speed switching 41 0.595 Low drain-source ON-resistance A RDS (ON) = 41 m
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: PHB3N60E
History: PHB3N60E
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918