TPCF8104 PDF and Equivalents Search

 

TPCF8104 Specs and Replacement

Type Designator: TPCF8104

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.8 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: VS8

TPCF8104 substitution

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TPCF8104 datasheet

 ..1. Size:264K  toshiba
 tpcf8104.pdf pdf_icon

TPCF8104

TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPCF8104 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 21 m (typ.) High forward transfer admittance Yfs = 9.6 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -30 V) Enhancement mode Vth = -0.8 to -2.0 V ... See More ⇒

 7.1. Size:219K  toshiba
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TPCF8104

TPCF8108 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8108 TPCF8108 TPCF8108 TPCF8108 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = ... See More ⇒

 7.2. Size:223K  toshiba
 tpcf8105.pdf pdf_icon

TPCF8104

TPCF8105 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCF8105 TPCF8105 TPCF8105 TPCF8105 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 24 m (typ.) (VG... See More ⇒

 7.3. Size:224K  toshiba
 tpcf8102.pdf pdf_icon

TPCF8104

TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 24 m (typ.) High forward transfer admittance Yfs = 14 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -20 V) Enhancement mode Vth = -0.5 to -1.2 V ... See More ⇒

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Detailed specifications: TPCC8002-H, TPCC8003-H, TPCC8005-H, TPCC8006-H, TPCC8102, TPCF8001, TPCF8102, TPCF8103, IRF840, TPCF8302, TPCF8303, TPCL4201, TPCL4202, TPCL4203, TPCM8001-H, TPCM8002-H, TPCM8003-H

Keywords - TPCF8104 MOSFET specs

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