All MOSFET. TPCM8002-H Datasheet

 

TPCM8002-H MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPCM8002-H
   Marking Code: M8002H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 505 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: TSSOP-ADVANCE

 TPCM8002-H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPCM8002-H Datasheet (PDF)

 ..1. Size:238K  toshiba
 tpcm8002-h.pdf

TPCM8002-H TPCM8002-H

TPCM8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCM8002-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.050.250.80.05 M A5Portable Equipment Applications 80.200.2 Small footprint due to a small and thin package High-speed switching 0.5541 Small gate charge: QSW = 9.3 nC

 7.1. Size:538K  toshiba
 tpcm8001-h.pdf

TPCM8002-H TPCM8002-H

TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications 0.250.050.80.05 M A8 5Portable-Equipment Applications 0.200.2 Small footprint due to a small and thin package High-speed switching 0.5541 Small gate char

 7.2. Size:307K  toshiba
 tpcm8003-h.pdf

TPCM8002-H TPCM8002-H

TPCM8003-H NMOS (U-MOS-H) TPCM8003-H DC/DC : mm PC 0.250.050.80.05 M A 8 50.200.2 0.5541

 7.3. Size:199K  toshiba
 tpcm8006.pdf

TPCM8002-H TPCM8002-H

TPCM8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS) TPCM8006 Lithium Ion Battery Applications Notebook PC Applications Unit: mmPortable Equipment Applications 0.250.050.80.05 M A8 5 Small footprint due to a small and thin package 0.200.2 Low drain-source ON-resistance: RDS (ON) = 5.5 m (typ.) High forward transfer adm

 7.4. Size:218K  toshiba
 tpcm8004-h.pdf

TPCM8002-H TPCM8002-H

TPCM8004-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H) TPCM8004-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications 0.250.050.80.05 M APortable Equipment Applications 8 50.200.2 Small footprint due to a small and thin package High-speed switching 0.5541 Small gate charge: QSW = 5.0 nC (ty

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: PHB3N60E | PHD37N06LT

 

 
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