TPCM8004-H Specs and Replacement
Type Designator: TPCM8004-H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.8 nS
Cossⓘ - Output Capacitance: 303 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TSSOP-ADVANCE
TPCM8004-H substitution
- MOSFET ⓘ Cross-Reference Search
TPCM8004-H datasheet
tpcm8004-h.pdf
TPCM8004-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H) TPCM8004-H High-Efficiency DC-DC Converter Applications Unit mm Notebook PC Applications 0.25 0.05 0.8 0.05 M A Portable Equipment Applications 8 5 0.2 0 0.2 Small footprint due to a small and thin package High-speed switching 0.55 4 1 Small gate charge QSW = 5.0 nC (ty... See More ⇒
tpcm8001-h.pdf
TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCM8001-H High-Efficiency DC DC Converter Applications Unit mm Notebook PC Applications 0.25 0.05 0.8 0.05 M A 8 5 Portable-Equipment Applications 0.2 0 0.2 Small footprint due to a small and thin package High-speed switching 0.55 4 1 Small gate char... See More ⇒
tpcm8006.pdf
TPCM8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS ) TPCM8006 Lithium Ion Battery Applications Notebook PC Applications Unit mm Portable Equipment Applications 0.25 0.05 0.8 0.05 M A 8 5 Small footprint due to a small and thin package 0.2 0 0.2 Low drain-source ON-resistance RDS (ON) = 5.5 m (typ.) High forward transfer adm... See More ⇒
Detailed specifications: TPCF8302, TPCF8303, TPCL4201, TPCL4202, TPCL4203, TPCM8001-H, TPCM8002-H, TPCM8003-H, IRLZ44N, TPCM8006, TPCM8102, TPCM8A05-H, TPCP8001-H, TPCP8002, TPCP8201, TPCP8202, TPCP8301
Keywords - TPCM8004-H MOSFET specs
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