TPCP8001-H MOSFET. Datasheet pdf. Equivalent
Type Designator: TPCP8001-H
Marking Code: 8001H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 7.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.3 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: PS8
TPCP8001-H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPCP8001-H Datasheet (PDF)
tpcp8001-h.pdf
TPCP8001-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TENTATIVE TPCP8001-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications 0.330.05Portable Equipment Applications M+0.05 A Small footprint due to small and thin package High speed switching 0.170.02B0.330.05 0.05M B
tpcp8004.pdf
TPCP8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCP8004 Notebook PC Applications Unit: mmPortable Equipment Applications 0.33 0.05 M 0.05 A 8 5 Small footprint due to a small and thin package High speed switching Small gate charge: Qg = 26nC (typ.) 0.475 1 4 B M 0.05 B 0.65 Low drain-source ON-resistance:
tpcp8006.pdf
TPCP8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) TPCP8006 Notebook PC Applications Portable Equipment Applications Unit: mm0.33 0.05 M 0.05 A Small footprint due to small and thin package 8 5 Low drain-source ON-resistance: RDS (ON) = 6.5 m (typ.) High forward transfer admittance:|Yfs| = 36 S (typ.) Low leakage curr
tpcp8003-h.pdf
TPCP8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCP8003-H High Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications 0.330.05 0.05 M A8 5Portable Equipment Applications Small footprint due to a small and thin package 0.475 1 4 High speed switching B0.05 M B0.65 Small gate charge:
tpcp8005-h.pdf
TPCP8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCP8005-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications 0.330.05 0.05 M APortable Equipment Applications 8 5 Small footprint due to a small and thin package High-speed switching 0.475 1 4B0.05 M B0.65 Small gate charge: QSW = 5.0 nC (typ.
tpcp8007-h.pdf
TPCP8007-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCP8007-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 2.7 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 40 m (typ.)
tpcp8002.pdf
TPCP8002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) TPCP8002 Notebook PC Applications Portable Equipment Applications Unit: mm0.330.05 Lead (Pb)-Free 0.05 M A8 5 Small footprint due to small and thin package Low drain-source ON-resistance : RDS (ON) = 7 m (typ.) High forward transfer admittance 0.475 1 4B:|Yfs| = 36 S
tpcp8009.pdf
TPCP8009MOSFETs Silicon N-channel MOS (U-MOS)TPCP8009TPCP8009TPCP8009TPCP80091. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge : QSW = 9.6 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 9.5 m (typ.) (VGS = 10 V)
tpcp8008-h.pdf
TPCP8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCP8008-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications 0.33 0.05 M 0.05 A 8 5 Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.8 nC (typ.) Low drain-sour
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