TPCS8008-H Specs and Replacement
Type Designator: TPCS8008-H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 220 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TSSOP8
TPCS8008-H substitution
- MOSFET ⓘ Cross-Reference Search
TPCS8008-H datasheet
tpcs8008-h.pdf
TPCS8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH -MOS ) TPCS8008-H High-Speed Switching Applications Unit mm Switching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance RDS (ON) = 0.48 (typ.) High forward transfer admittance Yfs = 1.8 S (typ.) Low leakage current IDSS = 100 A (max) (VDS =... See More ⇒
tpcs8007-h.pdf
TPCS8007-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH -MOS ) TPCS8007-H High-Speed Switching Applications Unit mm Switching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance RDS (ON) = 0.36 (typ.) High forward transfer admittance Yfs = 2.1 S (typ.) Low leakage current IDSS = 100 A (max) (VDS =... See More ⇒
tpcs8009-h.pdf
TPCS8009-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH -MOS ) TPCS8009-H High-Speed Switching Applications Unit mm Switching Regulator Applications DC/DC Converter Applications Low drain-source ON-resistance RDS (ON) = 0.27 (typ.) High forward transfer admittance Yfs = 2.1 S (typ.) Low leakage current IDSS = 100 A (max) (VDS =... See More ⇒
tpcs8006.pdf
TPCS8006 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) TPCS8006 High-Speed Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications Low drain-source ON resistance RDS (ON) = 0.8 (typ.) High forward transfer admittance Yfs = 1.6 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 250 V) ... See More ⇒
Detailed specifications: TPCP8202, TPCP8301, TPCP8302, TPCP8402, TPCP8403, TPCS8004, TPCS8006, TPCS8007-H, IRF630, TPCS8009-H, TPCS8101, TPCS8102, TPCS8104, TPCS8105, TPCS8204, TPCS8205, TPCS8208
Keywords - TPCS8008-H MOSFET specs
TPCS8008-H cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SWT38N65K2
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