All MOSFET. TPCS8101 Datasheet

 

TPCS8101 Datasheet and Replacement


   Type Designator: TPCS8101
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TSSOP8
 

 TPCS8101 substitution

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TPCS8101 Datasheet (PDF)

 ..1. Size:311K  toshiba
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TPCS8101

TPCS8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8101 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: R = 15 m (typ.) DS (ON) High forward transfer admittance: |Y | = 12 S (typ.) fs Low leakage current: IDSS = -10

 7.1. Size:303K  toshiba
tpcs8102.pdf pdf_icon

TPCS8101

TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8102 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: R = 16 m (typ.) DS (ON) High forward transfer admittance: |Y | = 17 S (typ.) fs Low leakage current: IDSS = -10

 7.2. Size:266K  toshiba
tpcs8105.pdf pdf_icon

TPCS8101

TPCS8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8105 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 9.6 m (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage cur

 7.3. Size:255K  toshiba
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TPCS8101

TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 8.1 m (typ.) DS (ON) High forward transfer admittance: |Y | = 23 S (typ.) fs Low leakag

Datasheet: TPCP8302 , TPCP8402 , TPCP8403 , TPCS8004 , TPCS8006 , TPCS8007-H , TPCS8008-H , TPCS8009-H , 2N7000 , TPCS8102 , TPCS8104 , TPCS8105 , TPCS8204 , TPCS8205 , TPCS8208 , TPCS8209 , TPCS8210 .

History: NCE60P12K | SFF20P10J | RSJ10HN06 | STN3PF06 | CMXDM7002A | SQ1470EH | IRFU214PBF

Keywords - TPCS8101 MOSFET datasheet

 TPCS8101 cross reference
 TPCS8101 equivalent finder
 TPCS8101 lookup
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