TPCS8102 PDF and Equivalents Search

 

TPCS8102 Specs and Replacement

Type Designator: TPCS8102

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.6 nS

Cossⓘ - Output Capacitance: 1030 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TSSOP8

TPCS8102 substitution

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TPCS8102 datasheet

 ..1. Size:303K  toshiba
 tpcs8102.pdf pdf_icon

TPCS8102

TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8102 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance R = 16 m (typ.) DS (ON) High forward transfer admittance Y = 17 S (typ.) fs Low leakage current IDSS = -10... See More ⇒

 7.1. Size:266K  toshiba
 tpcs8105.pdf pdf_icon

TPCS8102

TPCS8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8105 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 9.6 m (typ.) High forward transfer admittance Yfs = 23 S (typ.) Low leakage cur... See More ⇒

 7.2. Size:255K  toshiba
 tpcs8104.pdf pdf_icon

TPCS8102

TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 8.1 m (typ.) DS (ON) High forward transfer admittance Y = 23 S (typ.) fs Low leakag... See More ⇒

 7.3. Size:311K  toshiba
 tpcs8101.pdf pdf_icon

TPCS8102

TPCS8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8101 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance R = 15 m (typ.) DS (ON) High forward transfer admittance Y = 12 S (typ.) fs Low leakage current IDSS = -10... See More ⇒

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Detailed specifications: TPCP8402, TPCP8403, TPCS8004, TPCS8006, TPCS8007-H, TPCS8008-H, TPCS8009-H, TPCS8101, 2SK3878, TPCS8104, TPCS8105, TPCS8204, TPCS8205, TPCS8208, TPCS8209, TPCS8210, TPCS8211

Keywords - TPCS8102 MOSFET specs

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