TPCS8104
MOSFET. Datasheet pdf. Equivalent
Type Designator: TPCS8104
Marking Code: S8104
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 107
nC
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 590
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package:
TSSOP8
TPCS8104
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPCS8104
Datasheet (PDF)
..1. Size:255K toshiba
tpcs8104.pdf 
TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 8.1 m (typ.) DS (ON) High forward transfer admittance: |Y | = 23 S (typ.) fs Low leakag
7.1. Size:303K toshiba
tpcs8102.pdf
TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8102 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: R = 16 m (typ.) DS (ON) High forward transfer admittance: |Y | = 17 S (typ.) fs Low leakage current: IDSS = -10
7.2. Size:266K toshiba
tpcs8105.pdf
TPCS8105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8105 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 9.6 m (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage cur
7.3. Size:311K toshiba
tpcs8101.pdf
TPCS8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8101 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: R = 15 m (typ.) DS (ON) High forward transfer admittance: |Y | = 12 S (typ.) fs Low leakage current: IDSS = -10
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