SSM3K04FS MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM3K04FS
Marking Code: DC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id|ⓘ - Maximum Drain Current: 0.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 9.3 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: SSM
SSM3K04FS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM3K04FS Datasheet (PDF)
ssm3k04fs.pdf
SSM3K04FS NMOS SSM3K04FS : mm : RGS = 1 M (typ.) VthCMOS : Vth = 0.7~1.3 V
ssm3k04fe.pdf
SSM3K04FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FE High Speed Switching Applications Unit: mm With built-in gate-source resistor: RGS = 1 M (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDS 20 VGat
ssm3k04fv.pdf
SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High Speed Switching Applications Unit: mm1.20.05 With built-in gate-source resistor: RGS = 1 M (typ.) 0.80.05 2.5 V gate drive High input impedance Low gate threshold voltage: Vth = 0.7~1.3 V 1 Optimum for high-density mounting in small packages www.DataSheet4U.com
ssm3k04fu.pdf
SSM3K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FU High Speed Switch Applications Unit: mm With built-in gate-source resistor: RGS = 1 M (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package www.DataSheet4U.comAbsolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source vol
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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