All MOSFET. 2SK117 Datasheet

 

2SK117 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK117

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.3 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Drain Current |Id|: 0.014 A

Maximum Junction Temperature (Tj): 125 °C

Maximum Drain-Source On-State Resistance (Rds): 250 Ohm

Package: TO92

2SK117 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK117 Datasheet (PDF)

0.1. 2sk1178.pdf Size:42K _1

2SK117
2SK117

2SK1178External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 500 V V 500 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 4.0 A I 250 A V = 500V, V = 0VD DSS DS GSI 16 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD

0.2. 2sk1177.pdf Size:42K _1

2SK117
2SK117

2SK1177External dimensions 1......FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 500 V V 500 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 2.5 A I 250 A V = 500V, V = 0VD DSS DS GSI 10 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD (

 0.3. 2sk1179 2sk1183.pdf Size:78K _1

2SK117
2SK117

2-2 MOS FETsSpecifications List by Part NumberAbsolute Maximum RatingsIGSS IDSS VTHVDSS VGSS ID ID (pulse) PDPart EASConditions Conditions ConditionsNumber(nA) VGS (A) VDS (V) VDS ID(mJ)(V) (V) (A) (A) (W)max (V) min max (V) min max (V) ( A)2SK1179 500 20 8.5 34 85 400 500 20 250 500 2.0 4.0 10 2502SK1183 200 20 3 12 25 30 500 20 250 200 2.0

0.4. 2sk117.pdf Size:299K _toshiba

2SK117
2SK117

2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications Unit: mm High |Yfs|: |Y | = 15 mS (typ.) (V = 10 V, V = 0) fs DS GS High breakdown voltage: V = -50 V GDS Low noise: NF = 1.0dB (typ.) (V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k) DS D G High input impedance: I = -1 nA (max) (V = -30 V) GS

 0.5. 2sk1169 2sk1170.pdf Size:44K _hitachi

2SK117
2SK117

2SK1169, 2SK1170Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converterOutlineTO-3PD1G231. Gate2. Drain(Flange)S3. Source2SK1169, 2SK1170Absolute Maximum Ratings (Ta = 25C)Item Symbol

0.6. 2sk1172.pdf Size:60K _no

2SK117

2SK1172

0.7. 2sk1171-01 2sk1172-01.pdf Size:139K _no

2SK117

0.8. 2sk1172.pdf Size:203K _inchange_semiconductor

2SK117
2SK117

isc N-Channel MOSFET Transistor 2SK1172DESCRIPTIONDrain Current I =3.5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

0.9. 2sk1171.pdf Size:62K _inchange_semiconductor

2SK117
2SK117

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1171 DESCRIPTION Drain Current ID=4A@ TC=25 Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage

0.10. 2sk1170.pdf Size:259K _inchange_semiconductor

2SK117
2SK117

isc N-Channel MOSFET Transistor 2SK1170FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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