All MOSFET. 2SK208 Datasheet

 

2SK208 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK208

Marking Code: J*

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.1 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Drain Current |Id|: 0.0065 A

Maximum Junction Temperature (Tj): 125 °C

Maximum Drain-Source On-State Resistance (Rds): 800 Ohm

Package: SMINI_SC59

2SK208 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK208 Datasheet (PDF)

1.1. 2sk2080-01r.pdf Size:177K _update

2SK208
2SK208



1.2. 2sk2081-01.pdf Size:218K _update

2SK208
2SK208

FUJI POWER MOSFET 2SK2081-01 N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching TO-3P Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof Applications Switching regulators UPS 3. Source DC-DC converters JEDEC General purpose power amplifier EIAJ SC-65 Equivalent circuit schem

1.3. 2sk2088_2sk2089.pdf Size:98K _update

2SK208
2SK208



1.4. 2sk2084s-l.pdf Size:99K _update

2SK208
2SK208

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

1.5. 2sk2082-01.pdf Size:219K _update

2SK208
2SK208

N-channel MOS-FET 2SK2082-01 FAP-IIA Series 900V 1,4Ω 9A 150W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv

1.6. 2sk208.pdf Size:305K _toshiba

2SK208
2SK208

2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Unit: mm Condenser Microphone Applications High breakdown voltage: VGDS = -50 V High input impedance: I = -1.0 nA (max) (V = -30 V) GSS GS Low noise: NF = 0.5dB (typ.) (R = 100 k?, f = 120 Hz) G Small package. Maximum Ratings (Ta = = 25C) = =

1.7. 2sk2083.pdf Size:119K _sanyo

2SK208
2SK208

Ordering number:ENN4617 N-Channel Silicon MOSFET 2SK2083 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2090A Micaless package facilitating mounting. [2SK2083] 10.2 4.5 1.3 1 2 3 0 to 0.3 0.8 1.2 0.4 2.55 2.55 1 : Gate 2 : Drain 3 : Source 2.55 2.55 SANYO : SMP-FD Specifications Absolute Ma

1.8. 2sk2084.pdf Size:88K _renesas

2SK208
2SK208

2SK2084(L), 2SK2084(S) Silicon N Channel MOS FET REJ03G0995-0200 (Previous: ADE-208-1342) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC - DC converter Outline RENESAS Package code: PRSS0004Z

1.9. rej03g0995_2sk2084lsds.pdf Size:101K _renesas

2SK208
2SK208

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

Datasheet: 2SJ105 , 2SJ106 , 2SJ144 , 2SK117 , 2SK118 , 2SK170 , 2SK184 , 2SK1875 , IRFP150N , 2SK209 , 2SK210 , 2SK211 , 2SK246 , 2SK30ATM , 2SK330 , 2SK3376CT , 2SK3376MFV .

 


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