2SK208 Datasheet and Replacement
Type Designator: 2SK208
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Id|ⓘ - Maximum Drain Current: 0.0065
A
Tjⓘ - Maximum Junction Temperature: 125
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 800
Ohm
Package:
SMINI
SC59
- MOSFET Cross-Reference Search
2SK208 Datasheet (PDF)
..1. Size:305K toshiba
2sk208.pdf 
2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Unit: mm Condenser Microphone Applications High breakdown voltage: VGDS = -50 V High input impedance: I = -1.0 nA (max) (V = -30 V) GSS GS Low noise: NF = 0.5dB (typ.) (R = 100 k, f = 120 Hz) G Small package. Maximum Ratings (Ta ==
0.1. Size:85K 1
2sk2084stl-e.pdf 
2SK2084(L), 2SK2084(S) Silicon N Channel MOS FET REJ03G0995-0200 (Previous: ADE-208-1342) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC - DC converter Outline RENESAS Package co
0.2. Size:119K sanyo
2sk2083.pdf 
Ordering number:ENN4617N-Channel Silicon MOSFET2SK2083Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2090A Micaless package facilitating mounting.[2SK2083]10.24.51.31 2 30 to 0.30.81.20.42.55 2.551 : Gate2 : Drain3 : Source2.55 2.55SANYO : SMP-FDSpecificationsAbsol
0.3. Size:88K renesas
2sk2084.pdf 
2SK2084(L), 2SK2084(S) Silicon N Channel MOS FET REJ03G0995-0200 (Previous: ADE-208-1342) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC - DC converter Outline RENESAS Package co
0.4. Size:101K renesas
rej03g0995 2sk2084lsds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.5. Size:99K renesas
2sk2084s-l.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.6. Size:219K fuji
2sk2082-01.pdf 
N-channel MOS-FET2SK2082-01FAP-IIA Series 900V 1,4 9A 150W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv
0.8. Size:218K fuji
2sk2081-01.pdf 
FUJI POWER MOSFET2SK2081-01N-CHANNEL SILICON POWER MOSFETFAP-IIA SERIESOutline DrawingsFeaturesHigh speed switchingTO-3PLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGS=30V GuaranteeAvalanche-proofApplicationsSwitching regulatorsUPS3. Source DC-DC convertersJEDECGeneral purpose power amplifierEIAJ SC-65Equivalent circuit schem
0.10. Size:222K inchange semiconductor
2sk2082-01.pdf 
isc N-Channel MOSFET Transistor 2SK2082-01DESCRIPTIONDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC ConvertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
0.11. Size:222K inchange semiconductor
2sk2081-01.pdf 
isc N-Channel MOSFET Transistor 2SK2081-01DESCRIPTIONDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC ConvertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYM
0.12. Size:222K inchange semiconductor
2sk2080-01.pdf 
isc N-Channel MOSFET Transistor 2SK2080-01DESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC ConvertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYM
0.13. Size:250K inchange semiconductor
2sk2080.pdf 
isc N-Channel MOSFET Transistor 2SK2080DESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC ConvertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
Datasheet: FMP36-015P
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History: 2SK1969-01
| 2N3797
| MMBF5457
| HSBA4006
| IPD90N06S4-05
| IXFN110N60P3
| AONS66408
Keywords - 2SK208 MOSFET datasheet
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