2SK371 Datasheet and Replacement

2SK371 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK371 For Low Noise Audio Amplifier Applications Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. High |Yfs|: |Yfs| = 40 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 5 mA) High breakdown voltage: VGDS = -40 V Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 m

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3715SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3715 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3715 Isolated TO-220 FEATURES Super low on-state resistance (Isolated TO-220) RDS(on)1 = 6.0 m MAX. (VGS = 10 V, ID = 38 A)

http://www.sanken-ele.co.jp SANKEN ELECTRIC May. 2011 Features Package Low on-state resistance 5.0m VGS=10V TO220S Built-in gate protection diode SMD PKG Applications DCDC converter Mortar drive Internal Equivalent Circuit Key Specifications V(BR)DSS = 60V (ID=100uA) (2) RDS(ON) = 5m max (ID=35A / VGS=10V)

60V N -ch MOSFET 2SK3711 December 2005 PackageTO3P Features Low on-resistance Built-in gate protection diode Avalanche energy capability guaranteed Applications Electric power steering High current switching Equivalent circuit D (2) G (1)S (3) Absolute maximum ratings (Ta=25C) Characteristic Symbol Rating UnitDrain to So

SMD Type MOSFETMOS Field Effect Transistor2SK3713TO-263Unit: mm+0.24.57-0.2+0.1Features1.27-0.1Super high VGS(off): VGS(off) = 3.8 to 5.8 VLow Crss: Crss = 6.5 pF TYP.Low QG: QG = 25 nC TYP.+0.10.1max1.27-0.1Low on-state resistance:+0.10.81-0.1RDS(on) =0.83 MAX. (VGS =10 V, ID =5A)2.541Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.22Drain3 Source

isc N-Channel MOSFET Transistor 2SK3712FEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 580m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

isc N-Channel MOSFET Transistor 2SK3716-ZFEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

isc N-Channel MOSFET Transistor 2SK3714FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3710FEATURESDrain Current I =85A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose app

isc N-Channel MOSFET Transistor 2SK3716FEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3715FEATURESDrain Current : I = 75A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3711FEATURESDrain Current I =70A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose app

isc N-Channel MOSFET Transistor 2SK3712-ZFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 580m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol