All MOSFET. 2SJ221 Datasheet

 

2SJ221 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ221

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 20 A

Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm

Package: TO220AB

2SJ221 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ221 Datasheet (PDF)

1.1. 2sj221.pdf Size:81K _renesas

2SJ221
2SJ221

2SJ221 Silicon P Channel MOS FET REJ03G0851-0200 (Previous: ADE-208-1185) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device ? Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code

1.2. rej03g0851 2sj221ds.pdf Size:94K _renesas

2SJ221
2SJ221

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 1.3. 2sj221.pdf Size:198K _inchange_semiconductor

2SJ221
2SJ221

isc P-Channel MOSFET Transistor 2SJ221 DESCRIPTION ·Low On Resistance ·High Speed Switching ·Low Drive Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching application ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) -100 V DSS GS V Gate-Source Voltage ±20 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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