2SJ319L MOSFET Datasheet: P-Ch, 200V, 3A. Full specification with pinout and replacement list

2SJ319L Specs and Replacement

Type Designator: 2SJ319L

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm

Package: DPAK

2SJ319L substitution

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2SJ319L datasheet

0.1. Size:103K renesas
r07ds0396ej 2sj319ls.pdf pdf_icon

Preliminary Datasheet R07DS0396EJ0300 2SJ319(L), 2SJ319(S) (Previous REJ03G0858-0200) Rev.3.00 Silicon P Channel MOS FET May 16, 2011 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0... See More ⇒

8.1. Size:87K renesas
2sj319.pdf pdf_icon

2SJ319(L), 2SJ319(S) Silicon P Channel MOS FET REJ03G0858-0200 (Previous ADE-208-1192) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0004ZD-A RENESAS Package ... See More ⇒

8.2. Size:1212K kexin
2sj319s.pdf pdf_icon

SMD Type MOSFET P-Channel MOSFET 2SJ319S TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features 4 VDS (V) =-200V ID =-3 A (VGS =-10V) 0.127 D +0.1 0.80-0.1 max RDS(ON) 2.3 (VGS =-10V) G High speed switching Low drive current + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4.60 -0.15 2 Drain 3 Source S 4 Drain ... See More ⇒

Detailed specifications: 2SJ186, 2SJ216, 2SJ217, 2SJ221, 2SJ222, 2SJ247, 2SJ248, 2SJ278, 8205A, 2SJ319S, 2SJ350, 2SJ387L, 2SJ387S, 2SJ479L, 2SJ479S, 2SJ505L, 2SJ505S