2SJ319L Datasheet and Replacement
Type Designator: 2SJ319L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: DPAK
2SJ319L substitution
2SJ319L Datasheet (PDF)
r07ds0396ej 2sj319ls.pdf

Preliminary Datasheet R07DS0396EJ03002SJ319(L), 2SJ319(S) (Previous: REJ03G0858-0200)Rev.3.00Silicon P Channel MOS FET May 16, 2011Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0
2sj319.pdf

2SJ319(L), 2SJ319(S) Silicon P Channel MOS FET REJ03G0858-0200 (Previous: ADE-208-1192) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RENESAS Package
2sj319s.pdf

SMD Type MOSFETP-Channel MOSFET2SJ319STO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 VDS (V) =-200V ID =-3 A (VGS =-10V)0.127D+0.10.80-0.1max RDS(ON) 2.3 (VGS =-10V)G High speed switching Low drive current+ 0.12.3 0.60- 0.1 1 Gate+0.154.60 -0.15 2 Drain3 SourceS4 Drain
Datasheet: 2SJ186 , 2SJ216 , 2SJ217 , 2SJ221 , 2SJ222 , 2SJ247 , 2SJ248 , 2SJ278 , 2SK3878 , 2SJ319S , 2SJ350 , 2SJ387L , 2SJ387S , 2SJ479L , 2SJ479S , 2SJ505L , 2SJ505S .
History: FMP13N60E | SE720 | PDC3803R | IRF8113GPBF | HAT2206C | VBMB165R18 | APM2317A
Keywords - 2SJ319L MOSFET datasheet
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History: FMP13N60E | SE720 | PDC3803R | IRF8113GPBF | HAT2206C | VBMB165R18 | APM2317A



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