2SJ319L Datasheet and Replacement
Type Designator: 2SJ319L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: DPAK
- MOSFET Cross-Reference Search
2SJ319L Datasheet (PDF)
r07ds0396ej 2sj319ls.pdf

Preliminary Datasheet R07DS0396EJ03002SJ319(L), 2SJ319(S) (Previous: REJ03G0858-0200)Rev.3.00Silicon P Channel MOS FET May 16, 2011Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0
2sj319.pdf

2SJ319(L), 2SJ319(S) Silicon P Channel MOS FET REJ03G0858-0200 (Previous: ADE-208-1192) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RENESAS Package
2sj319s.pdf

SMD Type MOSFETP-Channel MOSFET2SJ319STO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 VDS (V) =-200V ID =-3 A (VGS =-10V)0.127D+0.10.80-0.1max RDS(ON) 2.3 (VGS =-10V)G High speed switching Low drive current+ 0.12.3 0.60- 0.1 1 Gate+0.154.60 -0.15 2 Drain3 SourceS4 Drain
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: STL8P2UH7
Keywords - 2SJ319L MOSFET datasheet
2SJ319L cross reference
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History: STL8P2UH7



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