All MOSFET. 2SJ529S Datasheet

 

2SJ529S MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ529S

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 10 A

Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm

Package: DPAK

2SJ529S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ529S Datasheet (PDF)

1.1. 2sj529s.pdf Size:212K _inchange_semiconductor

2SJ529S
2SJ529S

INCHANGE Semiconductor isc P-Channel MOSFET Transistor 2SJ529S ·FEATURES ·With TO-252(DPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SY

4.1. rej03g0879 2sj529lsds.pdf Size:108K _renesas

2SJ529S
2SJ529S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. 2sj529.pdf Size:94K _renesas

2SJ529S
2SJ529S

2SJ529(L), 2SJ529(S) Silicon P Channel MOS FET REJ03G0879-0300 (Previous: ADE-208-654A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 ? typ. 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (L)-(2) ) (Package name:

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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