2SK1167 PDF and Equivalents Search

 ..1. Size:83K  renesas
 2sk1167.pdf

2SK1167, 2SK1168 Silicon N Channel MOS FET REJ03G0915-0200 (Previous ADE-208-1253) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZE-A (Package name T... See More ⇒

 ..2. Size:282K  inchange semiconductor
 2sk1167.pdf

isc N-Channel MOSFET Transistor 2SK1167 FEATURES With TO-3PN packaging Low drain-source on-resistance RDS(ON) =0.36 (MAX) Enhancement mode Vth = 3.0 to 4.0V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications DC-DC converters Uninterruptible power ... See More ⇒

 0.1. Size:96K  renesas
 rej03g0915 2sk1167ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:49K  1
 2sk1159 2sk1160.pdf

2SK1159, 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-220AB 1 D 2 3 1. Gate G 2. Drain (Flange) 3. Source S 2SK1159, 2SK1160 Absolute Maximum Ratings (Ta = 25... See More ⇒

 8.2. Size:84K  renesas
 2sk1161.pdf

2SK1161, 2SK1162 Silicon N Channel MOS FET REJ03G0912-0200 (Previous ADE-208-1250) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZE-A (Package name T... See More ⇒

 8.3. Size:97K  renesas
 rej03g0916 2sk1169ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.4. Size:981K  renesas
 2sk1163 2sk1164.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.5. Size:84K  renesas
 2sk1165.pdf

2SK1165, 2SK1166 Silicon N Channel MOS FET REJ03G0914-0200 (Previous ADE-208-1252) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZE-A (Package name T... See More ⇒

 8.6. Size:97K  renesas
 rej03g0912 2sk1161ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.7. Size:99K  renesas
 2sk1159 2sk1160.pdf

2SK1159, 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 (Previous ADE-208-1249) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code PRSS0004AC-A ... See More ⇒

 8.8. Size:44K  hitachi
 2sk1169 2sk1170.pdf

2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1169, 2SK1170 Absolute Maximum Ratings (Ta = 25 C) Item Symbol... See More ⇒

 8.9. Size:262K  inchange semiconductor
 2sk1160.pdf

isc N-Channel MOSFET Transistor 2SK1160 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.8 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 8.10. Size:210K  inchange semiconductor
 2sk1162.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1162 FEATURES With TO-3PN packaging Low on-resistance Low drive current No secondary breakdown Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications DC-DC converters Uninterruptible power supply ABS... See More ⇒

 8.11. Size:259K  inchange semiconductor
 2sk1161.pdf

isc N-Channel MOSFET Transistor 2SK1161 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.8 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

 8.12. Size:266K  inchange semiconductor
 2sk1169.pdf

isc N-Channel MOSFET Transistor 2SK1169 FEATURES With TO-3P packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour... See More ⇒

 8.13. Size:259K  inchange semiconductor
 2sk1168.pdf

isc N-Channel MOSFET Transistor 2SK1168 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

 8.14. Size:259K  inchange semiconductor
 2sk1165.pdf

isc N-Channel MOSFET Transistor 2SK1165 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 8.15. Size:259K  inchange semiconductor
 2sk1164.pdf

isc N-Channel MOSFET Transistor 2SK1164 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

 8.16. Size:259K  inchange semiconductor
 2sk1166.pdf

isc N-Channel MOSFET Transistor 2SK1166 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

 8.17. Size:259K  inchange semiconductor
 2sk1163.pdf

isc N-Channel MOSFET Transistor 2SK1163 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒