All MOSFET. 2SK1314S Datasheet

 

2SK1314S MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK1314S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 160 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: LDPAK

2SK1314S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1314S Datasheet (PDF)

7.1. 2sk1313 2sk1314.pdf Size:30K _hitachi

2SK1314S
2SK1314S

2SK1313(L)(S), 2SK1314(L)(S)Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converterOutlineLDPAK44123123DG1. Gate2. Drain3. SourceS4. Drain2SK1313(L)(S), 2SK1314(L)(S)Absolute Ma

8.1. 2sk1310.pdf Size:135K _toshiba

2SK1314S
2SK1314S

8.2. 2sk1310a.pdf Size:174K _toshiba

2SK1314S
2SK1314S

2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Unit in mm Output Power : Po 190 W (Min.) Drain Efficiency : = 65% (Typ.) D Frequency : f = 230 MHz Push-Pull Structure Package MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITDrain-Source Voltage VDSS 100 VGate-Sou

 8.3. rej03g0929 2sk1317ds.pdf Size:96K _renesas

2SK1314S
2SK1314S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.4. rej03g0927 2sk1313lsds.pdf Size:108K _renesas

2SK1314S
2SK1314S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. e2081267 2sk1315l.pdf Size:76K _renesas

2SK1314S
2SK1314S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.6. rej03g0930 2sk1318ds.pdf Size:96K _renesas

2SK1314S
2SK1314S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.7. rej03g0928 2sk1316lsds.pdf Size:141K _renesas

2SK1314S
2SK1314S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.8. 2sk1318.pdf Size:63K _hitachi

2SK1314S
2SK1314S

2SK1318Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-1269 (Z)1st. EditionJan. 2001Features Low on-resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-220FMD1231. GateG2. Drain3. SourceS2SK13

8.9. 2sk1315 2sk1316.pdf Size:30K _hitachi

2SK1314S
2SK1314S

2SK1315(L)(S), 2SK1316(L)(S)Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driverOutlineLDPAK44123123DG1. Gate2. Drain3. SourceS4. Drain2SK1315(L)(S), 2SK1316(L)(S

8.10. 2sk1317.pdf Size:48K _hitachi

2SK1314S
2SK1314S

2SK1317Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driverOutlineTO-3PD1G231. Gate2. Drain(Flange)S3. Source2SK1317Absolute Maximum Ratings (Ta = 25

8.11. 2sk1318.pdf Size:252K _inchange_semiconductor

2SK1314S
2SK1314S

isc N-Channel MOSFET Transistor 2SK1318FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 120m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

8.12. 2sk1319.pdf Size:199K _inchange_semiconductor

2SK1314S
2SK1314S

isc N-Channel MOSFET Transistor 2SK1319DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 250 VDSS GSV Gate-Sou

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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