All MOSFET. 2SK1314S Datasheet

 

2SK1314S MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK1314S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Drain Current |Id|: 5 A

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: LDPAK

2SK1314S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1314S Datasheet (PDF)

3.1. 2sk1313 2sk1314.pdf Size:30K _hitachi

2SK1314S
2SK1314S

2SK1313(L)(S), 2SK1314(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Source S 4. Drain 2SK1313(L)(S), 2SK1314(L)(S) Absolute Ma

4.1. 2sk1310.pdf Size:135K _toshiba

2SK1314S
2SK1314S



4.2. 2sk1310a.pdf Size:174K _toshiba

2SK1314S
2SK1314S

2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Unit in mm Output Power : Po ≥ 190 W (Min.) Drain Efficiency : η = 65% (Typ.) D Frequency : f = 230 MHz Push-Pull Structure Package MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 100 V Gate-Sou

 4.3. rej03g0929 2sk1317ds.pdf Size:96K _renesas

2SK1314S
2SK1314S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.4. rej03g0927 2sk1313lsds.pdf Size:108K _renesas

2SK1314S
2SK1314S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 4.5. e2081267 2sk1315l.pdf Size:76K _renesas

2SK1314S
2SK1314S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.6. rej03g0930 2sk1318ds.pdf Size:96K _renesas

2SK1314S
2SK1314S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.7. rej03g0928 2sk1316lsds.pdf Size:141K _renesas

2SK1314S
2SK1314S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4.8. 2sk1318.pdf Size:63K _hitachi

2SK1314S
2SK1314S

2SK1318 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1269 (Z) 1st. Edition Jan. 2001 Features • Low on-resistance • High speed switching • Low drive current • 4V gate drive device can be driven from 5V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SK13

4.9. 2sk1315 2sk1316.pdf Size:30K _hitachi

2SK1314S
2SK1314S

2SK1315(L)(S), 2SK1316(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Source S 4. Drain 2SK1315(L)(S), 2SK1316(L)(S

4.10. 2sk1317.pdf Size:48K _hitachi

2SK1314S
2SK1314S

2SK1317 Silicon N-Channel MOS FET Application High speed power switching Features • High breakdown voltage VDSS = 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1317 Absolute Maximum Ratings (Ta = 25°

4.11. 2sk1319.pdf Size:199K _inchange_semiconductor

2SK1314S
2SK1314S

isc N-Channel MOSFET Transistor 2SK1319 DESCRIPTION ·Drain Current –I = 8A@ T =25℃ D C ·Drain Source Voltage- : V = 250V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high speed power switching. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 250 V DSS GS V Gate-Sou

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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