2SK1335S Datasheet and Replacement

Ordering number:EN3137N-Channel Junction Silicon FET2SK1332Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Ideal for use in variable resistors, analog switches,unit:mmlow-frequency amplifiers, and constant-current2058circuits.[2SK1332]0.3Features0.153 Ultrasmall-sized package permitting 2SK1332-0 to 0.1applied sets to

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1339 Silicon N Channel MOS FET REJ03G0936-0200 (Previous: ADE-208-1276) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D

2SK1337 Silicon N Channel MOS FET REJ03G0934-0200 (Previous: ADE-208-1274) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENE

2SK1334 Silicon N Channel MOS FET REJ03G0932-0200 (Previous: ADE-208-1271) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PLZZ0004CA-A(Package name: UPAK R )

2SK1336 Silicon N Channel MOS FET REJ03G0933-0200 (Previous: ADE-208-1273) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1338 Silicon N Channel MOS FET REJ03G0935-0200 (Previous: ADE-208-1275) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)

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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1330A DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- : VDSS=900V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER Drain-Source Voltage (VGS=0) 900 V DSS VGS Gate-Source Voltag

isc N-Channel MOSFET Transistor 2SK1331DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITDrain-Source Voltage (V =0) 50

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1330 DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER Drain-Source Voltage (VGS=0) 800 V DSS VGS Gate-Source Voltage

isc N-Channel MOSFET Transistor 2SK1339DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra

isc N-Channel MOSFET Transistor 2SK1333FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 400m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

isc N-Channel MOSFET Transistor 2SK1338DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rela