2SK1340 PDF and Equivalents Search

 ..1. Size:89K  renesas
 2sk1340.pdf

2SK1340 Silicon N Channel MOS FET REJ03G0937-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Fla... See More ⇒

 ..2. Size:203K  inchange semiconductor
 2sk1340.pdf

isc N-Channel MOSFET Transistor 2SK1340 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra... See More ⇒

 0.1. Size:98K  renesas
 rej03g0937 2sk1340ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:83K  renesas
 2sk1342.pdf

2SK1342 Silicon N Channel MOS FET REJ03G0939-0200 (Previous ADE-208-1279) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D ... See More ⇒

 8.2. Size:97K  renesas
 rej03g0939 2sk1342ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.3. Size:82K  renesas
 2sk1341.pdf

2SK1341 Silicon N Channel MOS FET REJ03G0938-0200 (Previous ADE-208-1278) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D ... See More ⇒

 8.4. Size:95K  renesas
 rej03g0938 2sk1341ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.5. Size:189K  hitachi
 2sk133 2sk134 2sk135.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒

 8.6. Size:132K  no
 2sk1344.pdf

... See More ⇒

 8.7. Size:56K  no
 2sk1348.pdf

... See More ⇒

 8.8. Size:43K  no
 2sk1345 2sk1349.pdf

... See More ⇒

 8.9. Size:59K  no
 2sk1347.pdf

... See More ⇒

 8.10. Size:203K  inchange semiconductor
 2sk1342.pdf

isc N-Channel MOSFET Transistor 2SK1342 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra... See More ⇒

 8.11. Size:203K  inchange semiconductor
 2sk1341.pdf

isc N-Channel MOSFET Transistor 2SK1341 DESCRIPTION Drain Current I = 6A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra... See More ⇒

 8.12. Size:55K  inchange semiconductor
 2sk1346.pdf

... See More ⇒