BUK9675-55 Datasheet and Replacement

Philips Semiconductors Product specification TrenchMOS transistor BUK9675-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 19.7 Athe device f

BUK9575-55A; BUK9675-55ATrenchMOS logic level FETRev. 01 9 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9575-55A in SOT78 (TO-220AB)BUK9675-55A in SOT404 (D 2-PAK).2. Features TrenchMOS techno

BUK9675-55AN-channel TrenchMOS logic level FETRev. 2 8 February 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Featur

Philips Semiconductors Product specification TrenchMOS transistor BUK9575-100A Logic level FET BUK9675-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 23 Atrench techn

BUK9675-100AN-channel TrenchMOS logic level FET18 August 2015 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits AEC Q101 compl