All MOSFET. 2SK1517 Datasheet

 

2SK1517 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK1517
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 940 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO3P

 2SK1517 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1517 Datasheet (PDF)

 ..1. Size:84K  renesas
2sk1517.pdf

2SK1517
2SK1517

2SK1517, 2SK1518 Silicon N Channel MOS FET REJ03G0947-0200 (Previous: ADE-208-1287) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod

 ..2. Size:202K  inchange semiconductor
2sk1517.pdf

2SK1517
2SK1517

isc N-Channel MOSFET Transistor 2SK1517ESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

 0.1. Size:97K  renesas
rej03g0947 2sk1517ds.pdf

2SK1517
2SK1517

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:84K  renesas
2sk1515.pdf

2SK1517
2SK1517

2SK1515, 2SK1516 Silicon N Channel MOS FET REJ03G0946-0200 (Previous: ADE-208-1286) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod

 8.2. Size:83K  renesas
2sk1519 2sk1520.pdf

2SK1517
2SK1517

2SK1519, 2SK1520 Silicon N Channel MOS FET REJ03G0948-0300 (Previous: ADE-208-1288) Rev.3.00 Apr 27, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package cod

 8.3. Size:97K  renesas
rej03g0946 2sk1515ds.pdf

2SK1517
2SK1517

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:1474K  fuji
2sk1511.pdf

2SK1517
2SK1517

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 8.5. Size:147K  fuji
2sk1512-01.pdf

2SK1517
2SK1517

 8.6. Size:203K  inchange semiconductor
2sk1516.pdf

2SK1517
2SK1517

isc N-Channel MOSFET Transistor 2SK1516ESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

 8.7. Size:200K  inchange semiconductor
2sk1519.pdf

2SK1517
2SK1517

isc N-Channel MOSFET Transistor 2SK1519ESCRIPTIONDrain Current I =30A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

 8.8. Size:202K  inchange semiconductor
2sk1518.pdf

2SK1517
2SK1517

isc N-Channel MOSFET Transistor 2SK1518ESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

 8.9. Size:202K  inchange semiconductor
2sk1515.pdf

2SK1517
2SK1517

isc N-Channel MOSFET Transistor 2SK1515ESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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