2SK1573
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1573
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 105
nS
Cossⓘ -
Output Capacitance: 700
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5
Ohm
Package:
TO3P
2SK1573
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1573
Datasheet (PDF)
..1. Size:82K renesas
2sk1573.pdf
2SK1573 Silicon N Channel MOS FET REJ03G0955-0200 (Previous: ADE-208-1295) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D
0.1. Size:96K renesas
rej03g0955 2sk1573ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.1. Size:120K sanyo
2sk1578.pdf
Ordering number:EN4178AN-Channel Junction FET2SK1578Capacitor Microphone ApplicationsFeatures Package Dimensions Especially suited for use in audio, telephone capaci-unit:mmtor microphones.2034A Excellent voltage characteristics.[2SK1578] Excellent transient characteristics.2.24.0 Adoption of FBET process.0.40.50.40.41 2 31 : Source1.3 1.3
8.2. Size:988K renesas
2sk1572.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.3. Size:70K renesas
2sk1579.pdf
2SK1579 Silicon N Channel MOS FET REJ03G0956-0200 (Previous: ADE-208-1296) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Suitable for low voltage operation Outline RENESAS Package code: PLZZ0004CA-A(Package name: UPAK R )D12 1. Gate32. DrainG 3. Source44. DrainSNote: Markin
8.4. Size:216K inchange semiconductor
2sk1570.pdf
isc N-Channel MOSFET Transistor 2SK1570DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX
8.5. Size:59K inchange semiconductor
2sk1574.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1574 DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- : VDSS=500 (Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) UNISYM
8.6. Size:216K inchange semiconductor
2sk1571.pdf
isc N-Channel MOSFET Transistor 2SK1571DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX
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