BUK98150-55 Datasheet and Replacement

Philips Semiconductors Product specification TrenchMOS transistor BUK98150-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. The device features very ID Drain current 5.5 Alow on-state resistanc

BUK98150-55www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4.5RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3.5 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unl

BUK98150-55AN-channel TrenchMOS logic level FET19 March 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits Low conduction

BUK98150-55ATrenchMOS logic level FETRev. 01 03 October 2000 Product specificationM3D0871. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK98150-55A in SOT223 (SC-73).2. Features TrenchMOS technology Q101 compliant 150 C rated

BUK98180-100AN-channel TrenchMOS logic level FET16 March 2016 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits Low conduction