2SK1933 PDF and Equivalents Search

 ..1. Size:82K  renesas
 2sk1933.pdf

2SK1933 Silicon N Channel MOS FET REJ03G0984-0300 (Previous ADE-208-1332) Rev.3.00 Apr 27, 2006 Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source ... See More ⇒

 ..2. Size:223K  inchange semiconductor
 2sk1933.pdf

isc N-Channel MOSFET Transistor 2SK1933 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suitable for switching regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V ... See More ⇒

 0.1. Size:96K  renesas
 rej03g0984 2sk1933ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.1. Size:515K  1
 2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf

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 8.2. Size:381K  toshiba
 2sk1930.pdf

2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSII.5) 2SK1930 Chopper Regulator, DC-DC Converter, and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 3.0 (typ.) High forward transfer admittance Y = 2.0 S (typ.) fs Low leakage current I = 300 A (max) (V = 800 V) DSS DS Enhancement-mode Vth = 1.5 3... See More ⇒

 8.3. Size:82K  renesas
 2sk1934.pdf

2SK1934 Silicon N Channel MOS FET REJ03G0985-0200 (Previous ADE-208-1333) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on resistance High speed switching No secondary breakdown Suitable for switching regulator Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source... See More ⇒

 8.4. Size:53K  nec
 2sk193.pdf

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 8.5. Size:214K  fuji
 2sk1936-01.pdf

N-channel MOS-FET 2SK1936-01 FAP-IIA Series 500V 0,76 10A 100W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ... See More ⇒

 8.6. Size:213K  fuji
 2sk1939-01.pdf

N-channel MOS-FET 2SK1939-01 FAP-IIA Series 600V 1,2 8A 100W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv... See More ⇒

 8.7. Size:215K  fuji
 2sk1937-01.pdf

N-channel MOS-FET 2SK1937-01 FAP-IIA Series 500V 0,48 15A 125W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ... See More ⇒

 8.8. Size:244K  fuji
 2sk1938.pdf

FUJI POWER MOSFET 2SK1938-01R N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching 5.5 0.3 0.3 Low on-resistance 0.2 15.5 3.2 3.2+0.3 No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof 0.3 2.1 0.3 1.6 +0.2 1.1 0.1 0.2 3.5 0.2 0.2 Applications 5.45 5.45 0.6+0.2 Switching r... See More ⇒

 8.9. Size:237K  inchange semiconductor
 2sk1939-01.pdf

isc N-Channel MOSFET Transistor 2SK1939-01 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒

 8.10. Size:237K  inchange semiconductor
 2sk1937-01.pdf

isc N-Channel MOSFET Transistor 2SK1937-01 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

 8.11. Size:219K  inchange semiconductor
 2sk1938.pdf

isc N-Channel MOSFET Transistor 2SK1938 DESCRIPTION Drain Current I =18A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT... See More ⇒

 8.12. Size:238K  inchange semiconductor
 2sk1938-01.pdf

isc N-Channel MOSFET Transistor 2SK1938-01 DESCRIPTION Drain Current I =18A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒

 8.13. Size:219K  inchange semiconductor
 2sk1936.pdf

isc N-Channel MOSFET Transistor 2SK1936 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒

 8.14. Size:219K  inchange semiconductor
 2sk1939.pdf

isc N-Channel MOSFET Transistor 2SK1939 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒

 8.15. Size:219K  inchange semiconductor
 2sk1937.pdf

isc N-Channel MOSFET Transistor 2SK1937 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 50... See More ⇒