2SK2084STL-E MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2SK2084STL-E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
   Package: DPAK

2SK2084STL-E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK2084STL-E Datasheet (PDF)

..1. Size:85K 1
2sk2084stl-e.pdf

2SK2084(L), 2SK2084(S) Silicon N Channel MOS FET REJ03G0995-0200 (Previous: ADE-208-1342) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC - DC converter Outline RENESAS Package co

6.1. Size:99K renesas
2sk2084s-l.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

7.1. Size:88K renesas
2sk2084.pdf