BUK9830-30 MOSFET. Datasheet pdf. Equivalent

   Type Designator: BUK9830-30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 3.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOT223

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BUK9830-30 Datasheet (PDF)

..1. Size:56K philips
buk9830-30 1.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK9830-30 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 30 Vmounting. Using trench ID Drain current (DC) Tsp = 25 C 12.8 Atechnology

8.1. Size:967K nxp
buk9832-55a.pdf pdf_icon

BUK9832-55AN-channel TrenchMOS logic level FETRev. 02 1 June 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features

8.2. Size:897K cn vbsemi
buk9832-55.pdf pdf_icon

BUK9832-55www.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET

9.1. Size:59K philips
buk9840-55 2.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK9840-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. The device features very ID Drain current 10.7 Alow on-state resistanc

9.2. Size:295K philips
buk98150 55a-01.pdf pdf_icon

BUK98150-55ATrenchMOS logic level FETRev. 01 03 October 2000 Product specificationM3D0871. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology, featuring very low on-state resistance.Product availability:BUK98150-55A in SOT223 (SC-73).2. Features TrenchMOS technology Q101 compliant 150 C rated

9.3. Size:54K philips
buk98150-55 2.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK98150-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. The device features very ID Drain current 5.5 Alow on-state resistanc

9.4. Size:55K philips
buk9880-55 2.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor BUK9880-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. The device features very ID Drain current 7.5 Alow on-state resistance

9.5. Size:711K nxp
buk98180-100a.pdf pdf_icon

BUK98180-100AN-channel TrenchMOS logic level FET16 March 2016 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits Low conduction

9.6. Size:716K nxp
buk9875-100a.pdf pdf_icon

BUK9875-100AN-channel TrenchMOS logic level FET19 March 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits Low conduction

9.7. Size:744K nxp
buk98150-55a.pdf pdf_icon

BUK98150-55AN-channel TrenchMOS logic level FET19 March 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits Low conduction

9.8. Size:735K nxp
buk9880-55a.pdf pdf_icon

BUK9880-55AN-channel TrenchMOS logic level FET19 March 2014 Product data sheet1. General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.2. Features and benefits Low conduction l

9.9. Size:59K infineon
buk9840-55 2.pdf pdf_icon

9.10. Size:55K infineon
buk9880-55 2.pdf pdf_icon

9.11. Size:885K cn vbsemi
buk9840-55.pdf pdf_icon

BUK9840-55www.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET

9.12. Size:1496K cn vbsemi
buk98150-55.pdf pdf_icon

BUK98150-55www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 10 V 4.5RoHS10 nC COMPLIANT60APPLICATIONS0.085 at VGS = 4.5 V 3.5 Load Switches for Portable DevicesDSOT-223-3D GSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unl

Datasheet: BUK9618-55 , BUK9620-55 , BUK9624-55 , BUK9628-55 , BUK9635-55 , BUK9675-55 , BUK9775-55 , BUK98150-55 , IRF1405 , BUK9840-55 , BUK9880-55 , BUP60 , BUP61 , BUP62 , BUP63 , BUP64 , BUP65 .

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BUK9830-30 MOSFET. Datasheet pdf. Equivalent

BUK9830-30 Datasheet (PDF)

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